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Exposure mask for forming a photodiode and method of manufacturing the image sensor using the exposure mask

A technology of image sensor and photodiode, which is applied in the direction of original parts for photomechanical processing, electric solid-state devices, photoplate making process of patterned surface, etc., can solve the problems of deterioration of image sensor stability and influence of image sensor characteristics, etc., to achieve The effect of evenly overlapping margins and ensuring overlapping margins

Inactive Publication Date: 2010-06-09
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, if there is a small area outside the alignment of the photodiode region 106 and the gate 110, the overlap area will have a relatively large difference, thereby potentially greatly affecting the image simply by deteriorating the stability of the image sensor. Characteristics of the sensor

Method used

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  • Exposure mask for forming a photodiode and method of manufacturing the image sensor using the exposure mask
  • Exposure mask for forming a photodiode and method of manufacturing the image sensor using the exposure mask
  • Exposure mask for forming a photodiode and method of manufacturing the image sensor using the exposure mask

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Embodiment Construction

[0027] Reference will now be made in detail to specific embodiments of the present invention, exemplary embodiments of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0028] Figure 3a is a schematic diagram illustrating a unit pattern of an exposure mask for forming a photodiode of an image sensor according to an exemplary embodiment of the present invention. Figure 3b is shown by Figure 3a Schematic illustration of the injection profile of the photodiode formed by the exposure mask shown in . Figure 3c is shown Figure 3a Schematic illustration of the alignment of the cell patterns shown in .

[0029] refer to Figures 3a to 3c , an exposure mask for forming a photodiode of an image sensor includes a plurality of unit patterns 300 , 340 , 350 and 360 . Each of the plurality of unit patterns (eg, pattern 300 ) includes, for example, a main open...

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Abstract

An exposure mask for forming a photodiode of an image sensor and a method of manufacturing an image sensor using the exposure mask may be disclosed. An exposure mask for forming a photodiode of an image sensor includes a plurality of main open patterns, each having a first open pattern that is rectangular and a second open pattern extending outward from at least one corner of the first open pattern, and an open serif extending outward from each of the corners of the second open pattern that do not overlap with the first open pattern, covering a predetermined area adjacent to the second open pattern.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2008-0100546 filed on October 14, 2008, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device, and more particularly, to an exposure mask for forming an ion implantation mask and a method for manufacturing an image sensor using the exposure mask, wherein the ion implantation mask is used in the photoelectric process of the image sensor in the diode region. Background technique [0003] Generally, an image sensor is a semiconductor device that converts an optical image into an electrical signal, for example, a charge coupled device (CCD) and a complementary metal oxide silicon (CMOS) device. [0004] Such an image sensor may be composed of a pixel area and a logic area, wherein the pixel area includes a photodiode for detecting light, and the logic area processes the detected light into an electrical signal...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F7/00H01L21/82
CPCG03F1/14H01L27/14689H01L27/14607G03F1/36G03F1/38G03F1/62
Inventor 赵禺瑱
Owner DONGBU HITEK CO LTD