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Laterally diffused metal oxide semiconductor element

A technology of oxide semiconductors and metals, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that the characteristics of the components cannot be obtained, and the turn-on resistance cannot be further reduced.

Active Publication Date: 2013-03-27
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the LDMOS transistor with the RESURF structure currently developed has the problem that the turn-on resistance cannot be further reduced, so that the LDMOS transistor cannot obtain better device characteristics.

Method used

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  • Laterally diffused metal oxide semiconductor element
  • Laterally diffused metal oxide semiconductor element
  • Laterally diffused metal oxide semiconductor element

Examples

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Effect test

no. 1 example

[0026] figure 1 It is a schematic cross-sectional structure diagram of a laterally diffused metal oxide semiconductor device according to the first embodiment of the present invention.

[0027] Please refer to figure 1 , the lateral double-diffused metal oxide semiconductor device 10 includes a substrate 100, a deep well 102 with a first conductivity type, a well 104 with a second conductivity type, a drain region 106 with a first conductivity type, and a deep well 102 with a first conductivity type. The source region 108 , the channel region 110 , a plurality of doped layers 112 a , 112 b , 112 c of the second conductivity type, and the gate 113 . In this embodiment, the substrate 100 may be, for example, a substrate with the second conductivity type. Moreover, the lateral double diffused metal oxide semiconductor device 10 may further include an isolation structure 116 , a contact region 118 having a second conductivity type, and a spacer wall 122 . The first conductivity...

no. 2 example

[0034] figure 2 It is a schematic diagram of a cross-sectional structure of a laterally diffused metal oxide semiconductor device according to a second embodiment of the present invention. In this embodiment, the structure of the laterally diffused metal oxide semiconductor device 10 a is similar to that of the laterally diffused metal oxide semiconductor device 10 described in the first embodiment, and only the main differences will be described below.

[0035] Please refer to figure 2 , in this embodiment, the doped layers 112a, 112b, 112c include a plurality of doped blocks 124a, 124b, 124c, and the dopant concentrations of the doped blocks 124a, 124b, 124c are, for example, the same. Moreover, the sizes of the doped regions 124a, 124b, and 124c are, for example, the same. Therefore, the number of doped regions included in the doped layers 112a, 112b, and 112c is, for example, proportional to the relationship between the doped layers 112a, 112b, and 112c and the substrat...

no. 3 example

[0039] Figure 4 It is a schematic cross-sectional structure diagram of a laterally diffused metal oxide semiconductor device according to a third embodiment of the present invention.

[0040] Please refer to Figure 4 , the lateral double-diffused metal oxide semiconductor device 10c includes a substrate 100, a deep well 102 with a first conductivity type, a well 104 with a second conductivity type, a drain region 106 with a first conductivity type, and a deep well 102 with a first conductivity type. The source region 108 , the channel region 110 , the doped layer 112 with the second conductivity type, and the gate 113 . In this embodiment, the substrate 100 is, for example, a substrate of the second conductivity type. Moreover, the lateral double-diffused metal oxide semiconductor device 10 c further includes an isolation structure 116 , a contact region 118 having a second conductivity type, and a spacer wall 122 . Wherein, the substrate 100, the deep well 102, the well ...

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PUM

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Abstract

The invention provides a laterally diffused metal oxide semiconductor element, comprising a substrate, a deep trap with the first conductive type, a trap with the second conductive type, a source region with the first conductive type, a drain region with the first conductive type, a channel region, a plurality of doped layers and grid electrodes with the second conductive type. The deep trap and the trap are arranged in the substrate. The source region is arranged in the trap. The drain region is arranged in the deep trap. The channel region is arranged in the trap between the source region and the drain region. The doped layers are arranged in the deep trap between the channel region and the drain region, thereby forming a plurality of exhaustion regions to improve the exhaustion degree of the deep trap. Compared to other parts of the deep trap, the deep trap close to the drain region has a higher exhaustion degree. The grid electrode is arranged on the substrate between the drain region and the source region, and covers the channel region.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to a laterally diffused metal oxide semiconductor device. Background technique [0002] Lateral diffused metal oxide semiconductor (LDMOS) transistors have been widely used in various power integrated circuits or intelligent power integrated circuits. Generally speaking, LDMOS transistors need to have a high breakdown voltage (breakdown voltage) and low on-state resistance (Ron) in order to improve device performance. In order to obtain a high breakdown voltage, an LDMOS transistor called a Reduced Surface Field (RESURF) structure emerges as the times require. [0003] Since the laterally diffused metal-oxide-semiconductor transistor of the RESURF structure can completely deplete the deep well between the source region and the drain region during operation, a uniform electric field is formed between the source region and the drain region, and the strike of the element The brea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 陈柏安
Owner NUVOTON