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Organic solar cell structure based on oxide doped organic material

A technology of solar cells and organic materials, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as great influence on device life, and achieve the effects of improving interface morphology, reducing infiltration, and improving stability

Inactive Publication Date: 2012-09-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is worth noting that the interface between the electrode and the organic film has a great influence on the lifetime of the device.

Method used

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  • Organic solar cell structure based on oxide doped organic material
  • Organic solar cell structure based on oxide doped organic material
  • Organic solar cell structure based on oxide doped organic material

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0032] see figure 1 as shown, figure 1 It is a schematic diagram of an organic solar cell structure based on an oxide-doped organic material provided by the present invention, and the structure includes from bottom to top:

[0033] A transparent substrate 10, glass or flexible polymer with good light transmission can be used;

[0034] An anode 20, the anode 20 is deposited on the substrate 10, the anode can be any of the following materials: ITO, FTO, or ITO or FTO modified with high work function metals such as gold or nickel;

[0035] A buffer layer 30, which is deposited on the anode 20, is composed of an oxide-doped organic material; the oxide can be selected from any of the following materials: MoO 3 、ReO 3 , WO ...

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Abstract

The invention relates to the technical field of an organic photoelectric device and discloses an organic solar cell structure based on oxide doped organic material. The structure comprises a transparent substrate, an anode deposited on the substrate, a buffer layer deposited on the anode, an organic electronic donor layer deposited on the buffer layer, an organic electronic acceptor layer deposited on the organic electronic donor layer and a cathode deposited on the organic electronic acceptor layer in turn from bottom to top. The anode adopts ITO (indium tin oxides) or FTO (fluorine doped tin oxide); the buffer layer adopts the oxide doped organic material, wherein the oxide adopts low-temperature materials such as MoO3 and ReO3; the organic electronic donor layer adopts CuPc or ZnPc; the organic electronic acceptor layer adopts C60 or PTCDA or PTCBI; and the cathode adopts aluminum or magnesium-silver alloy. Each layer, except the anode and cathode, is prepared by various organic film depositing methods such as vacuum evaporation, spraying and printing. Through the invention, the stability of the organic solar cell can be improved.

Description

technical field [0001] The invention relates to the technical field of organic photoelectric devices, in particular to an organic solar cell structure based on oxide-doped organic materials, which uses metal oxide-doped organic materials as a buffer layer without reducing the energy conversion efficiency of organic solar cells Under the premise of improving the stability of the battery. Background technique [0002] At present, solar cell products on the market are mainly based on inorganic materials, mainly based on semiconductor materials such as silicon wafers, cadmium telluride, and III-V compounds. This type of battery has stable performance and long service life, but its production cost is high, the process is complicated, the material requirements are harsh, and it may cause follow-up pollution, which makes this type of solar cell unable to be popularized in a large area. Organic solar cells use a wide range of materials, low prices, simple preparation processes, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44
CPCY02E10/50Y02E10/549
Inventor 曹国华关敏李林森曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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