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Silicon-controlled rectifier structure and manufacturing method thereof

A silicon-controlled rectifier and silicon-germanium technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as limiting the use of electrostatic protection structures and not integrating CMOS

Active Publication Date: 2011-07-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, many RF products using silicon germanium materials do not integrate CMOS, which greatly limits the use of electrostatic protection structures based on cost considerations.

Method used

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  • Silicon-controlled rectifier structure and manufacturing method thereof
  • Silicon-controlled rectifier structure and manufacturing method thereof
  • Silicon-controlled rectifier structure and manufacturing method thereof

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Embodiment Construction

[0023] An embodiment of the silicon controlled rectifier structure of the present invention is as follows Figure 4 As shown, it is formed above the silicon substrate and is isolated from other devices by field isolation regions 2 around; it consists of N-type deep well 1, P-type well 3, N-type lightly doped diffusion region 4, and P-type impurity-doped germanium silicon 7 Stacked vertically, in the N-type deep well is a P-type well 3, above the P-type well 3 is an N-type lightly doped diffusion region 4, and above the N-type lightly doped diffusion region 4 is doped with P-type impurities The silicon germanium 7, the N-type lightly doped diffusion region 4, and the silicon germanium 7 doped with P-type impurities are short-circuited through the through hole 11 and the metal line 12 is drawn out to connect the high potential end. The N-type deep well 1 The N-type lead-out region 10 of the P-type well 3 and the P-type lead-out region 9 of the P-type well 3 are short-circuited t...

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Abstract

The invention discloses a silicon-controlled rectifier structure. The silicon-controlled rectifier structure comprises an N-type deep trap, a P-type trap, an N-type lightly-doped diffusion region and a P-type impurity-doped germanium silicon. The P-type trap is arranged above the N-type deep trap. The N-type lightly-doped diffusion region is arranged above the P-type trap. The P-type impurity-doped germanium silicon is arranged above the N-type lightly-doped diffusion region. The N-type lightly-doped diffusion region and the P-type impurity-doped germanium silicon are in short-circuit connection through a metal wire and are used for connecting a high-potential end. An N-type lead-out region of the N-type deep trap and a P-type lead-out region of the P-type trap are in short-circuit connection through a metal wire and are used for connecting a low-potential end. The silicon-controlled rectifier structure provided by the invention can be used for static protection and can be manufactured by a conventional technology without increase in manufacturing cost.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a silicon controlled rectifier structure and a manufacturing method thereof. Background technique [0002] The harm of static electricity to electronic products has always been a problem that is not easy to solve. Based on different processes and requirements, we search / optimize different structures to meet the requirements of electrostatic protection. [0003] The electrostatic protection structure most used today mostly uses the GGNMOS structure (Ground GateNMOS). However, many RF products using silicon germanium materials do not integrate CMOS, which greatly limits the use of electrostatic protection structures based on cost considerations. [0004] Silicon controlled rectifier (Silicon control Rectifier) ​​such as figure 1 As shown, a group of PN structures can be connected as a high potential end, and another group of PN structures can be connected as a low potential end to be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L23/60H01L21/332
CPCH01L29/87H01L29/66121
Inventor 苏庆刘梅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP