Supercharge Your Innovation With Domain-Expert AI Agents!

LDMOS (lateral diffused metal-oxide-semiconductor device) capable of increasing punch-through protective voltage and manufacturing method thereof

An oxide semiconductor, horizontal technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of limiting the application range of components and reducing the breakdown protection voltage

Active Publication Date: 2011-08-10
RICHTEK TECH
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the prior art, a higher breakdown protection voltage is required, and the dose of ion implantation can be increased when the well region 12 is formed, but in this way, the breakdown protection voltage of the element is also reduced, which also limits the reliability of the element. Application range

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LDMOS (lateral diffused metal-oxide-semiconductor device) capable of increasing punch-through protective voltage and manufacturing method thereof
  • LDMOS (lateral diffused metal-oxide-semiconductor device) capable of increasing punch-through protective voltage and manufacturing method thereof
  • LDMOS (lateral diffused metal-oxide-semiconductor device) capable of increasing punch-through protective voltage and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0035] see figure 2 , showing the first embodiment of the present invention, this embodiment is a laterally diffused metal oxide semiconductor device, such as figure 2 As shown, a first conductivity type well region 12, an isolation region 13 (which can be LOCOS or STI, LOCOS is used as an example in the figure, and the following embodiments are also the same), a second conductivity type body region 14, and a drain electrode are formed in a substrate 11. 16. Form a gate structure 17 on the surface of the substrate 11, and form a source electrode 15 and a body electrode 19 in the body region 14; wherein, the first conductivity type is, for example, N type or P type, and the embodiments described later are also same. In addition, in this embodiment, the first conductive type impurity is implanted under the body region 14 by ion implantation technology to form a first conductive type doped region 18 . The cross-sectional width (or planar pattern) of the first conductivity-typ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an LDMOS (lateral diffused metal-oxide-semiconductor device) capable of increasing punch-through protective voltage and a manufacturing method thereof. The LDMOS capable of increasing punch-through protective voltage comprises a substrate, a first conductive well region located inside the substrate, an isolation region located in the substrate, a second conductive body region located inside the well region, a source located inside the body region, a drain located inside the well region, a gate structure located on the surface of the substrate, and a first conductive doped region located below the body region so as to increase the punch-through protective voltage; wherein the first conductive doped region and the body region is defined by the same photomask pattern.

Description

technical field [0001] The invention relates to a laterally diffused metal-oxide-semiconductor device (LDMOS, Lateral Diffused Metal-Oxide-Semiconductor Device) that increases the breakdown protection voltage (punch-through voltage), in particular to a device that can increase the breakdown protection voltage without sacrificing Laterally diffused metal-oxide-semiconductor devices with breakdown protection voltage (breakdown voltage). The invention also relates to a method for manufacturing a laterally diffused metal oxide semiconductor element with increased breakdown protection voltage. Background technique [0002] Laterally diffused metal oxide semiconductor devices are often used in high-voltage operating environments, such as high-power and high-frequency power amplifiers. LDMOS is characterized by high-voltage withstand voltage characteristics, which can withstand tens to hundreds of volts. [0003] The LDMOS device is similar to a conventional field effect transist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/16
CPCH01L29/0878H01L29/42368H01L29/7816
Inventor 黄宗义朱焕平杨清尧苏宏德
Owner RICHTEK TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com