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CMOS image sensor manufacturing method

A technology of image sensor and manufacturing method, which is applied in the direction of radiation control devices, etc., can solve problems such as impracticability, and achieve the effect of realizing performance and facilitating transfer

Active Publication Date: 2016-01-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In this type of semiconductor device, the second doped region as an inversion layer plays a crucial role, which has strict requirements on doping concentration and thickness, which cannot be achieved by traditional doping and photolithography techniques.

Method used

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Embodiment approach

[0020] refer to figure 2 , an embodiment of the CMOS image sensor manufacturing method of the present invention may include the following steps:

[0021] Step S1, providing a substrate with a first doping type;

[0022] Step S2, forming a first doped region with a second doping type in the substrate, the second doping type being opposite to the first doping type;

[0023] Step S3, etching in the first doped region to form a trench, the trench having the same or similar depth as the first doped region;

[0024] Step S4, forming an epitaxial layer with a first doping type, the epitaxial layer covering the surface of the first doped region;

[0025] In step S5 , at least a first dielectric layer and a first electrode layer are sequentially formed in the trenches.

[0026] Using the CMOS image sensor manufacturing method provided by each embodiment of the present invention, the image sensor is manufactured and obtained, the epitaxial layer and the first doped region form a pho...

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Abstract

The invention discloses a method for manufacturing a complementary metal-oxide-semiconductor (CMOS) image sensor. The method comprises the following steps of: providing a substrate with a first doping type; forming a first doping area with a second doping type in the substrate, wherein the second doping type is opposite to the first doping type; etching in the first doping area to form a groove, wherein the depth of the groove is equal or similar to that of the first doping area; forming an epitaxial layer with a first doping type, wherein the epitaxial layer covers the surface of the first doping area; and forming at least one first medium layer and a first electrode layer in the groove in turn. In the invention, the groove is formed by an etching technology, and the epitaxial layer playing a role of inversion is formed by an epitaxial process, so that the thickness and doping density of the epitaxial layer can be controlled precisely in the process; therefore, the performance of the dev ice is achieved better.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, and in particular to a manufacturing method of a CMOS image sensor. Background technique [0002] The image sensor is an important part of the digital camera. According to different devices, it can be divided into charge-coupled device (CCD), complementary metal-oxide semiconductor (CMOS) device and contact image sensor (CIS). [0003] Among them, the charge-coupled device (CCD) was developed earlier, and it is often used in high-end technical components of photography and imaging due to its high sensitivity, high resolution and excellent noise control performance. Although CCD has good performance, due to its large size, high power consumption, and incompatibility with the more common standard process in current semiconductor manufacturing technology, its production cost remains high and product compatibility poor. [0004] The CMOS image sensor does not have the inherent defects in the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 吴小利
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP