Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment
A physical parameter, chemical-mechanical technology, used in measuring devices, measuring heat, grinding devices, etc., can solve the problems of not being able to reveal the pressure situation well, and not being accurate enough.
Active Publication Date: 2012-10-10
HWATSING TECH
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Problems solved by technology
[0008] So far, the contact pressure distribution of the chemical mechanical polishing contact surface is mostly measured offline, and the fluid pressure of the contact surface is mostly based on the model research of the simple test bench, which cannot reveal the pressure situation under the actual working conditions well. Infrared method is not accurate enough
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[0042] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0043] In describing the present invention, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than Nothing indicating or implying that a referenced device or elem...
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The invention discloses a polishing solution physical parameter measuring apparatus and a measuring method which are used for chemically mechanical polishing equipment. The chemically mechanical polishing equipment comprises a polishing head, a rotary table, a polishing disc and a polishing pad, wherein the polishing pad is provided with a through hole. The polishing solution physical parameter measuring apparatus comprises a sensor, a transmitter and a processing unit, wherein the sensor is provided in the polishing disc and can pass through the through hole of the polishing pad to contact with the polishing solution so as to measure the physical parameters of the polishing solution, the transmitter is provided in the rotary table and is connected to the sensor to convert the measuring signal of the sensor into a standard electric signal, the processing unit is connected to the transmitter and is used to acquire the standard electric signal so as to obtain the physical parameters of the polishing solution. According to the polishing solution physical parameter measuring apparatus provided in the embodiment of the invention, measuring and obtaining the physical parameters of the polishing solution between the polishing head and the polishing pad on site can be realized. The invention also discloses chemically mechanical polishing equipment which possesses the polishing solution physical parameter measuring apparatus.
Description
technical field [0001] The invention relates to a polishing liquid physical parameter measuring device for chemical mechanical polishing equipment and a method for measuring the physical parameters of the polishing liquid using the polishing liquid physical parameter measuring device. The invention also relates to a polishing liquid physics Chemical Mechanical Polishing Equipment for Parameter Measurement Devices. Background technique [0002] In the integrated circuit manufacturing process, it is necessary to planarize and polish the film layer on the surface of the wafer to meet the requirements of subsequent processes. Chemical mechanical polishing (CMP) is currently a commonly used planarization method. [0003] The basic principle of chemical mechanical polishing is: the relative movement required for polishing is generated by the rotation of the polishing head and the polishing disc, the wafer is placed in the polishing head, the polishing pad is pasted on the surface ...
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IPC IPC(8): G01K7/00G01L9/00B24B37/07H01L21/67H01L21/66
CPCH01L21/00G01L9/00B24B37/07G01K7/00B24B37/00H01L21/67B24B37/044
Inventor 路新春赵德文何永勇雒建斌
Owner HWATSING TECH