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Drive circuit of insulated gate bipolar transistor

A technology of bipolar transistors and drive circuits, applied in electrical components, output power conversion devices, etc., can solve the problems of limiting the miniaturization and low cost of IGBT drive circuits

Active Publication Date: 2011-11-02
深圳市英威腾光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When it is necessary to drive multiple IGBTs, it is necessary to set up multiple auxiliary power supplies, which limits the miniaturization and low cost of the IGBT drive circuit

Method used

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  • Drive circuit of insulated gate bipolar transistor
  • Drive circuit of insulated gate bipolar transistor
  • Drive circuit of insulated gate bipolar transistor

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Embodiment Construction

[0069] The technical solution in the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0070] The invention provides an insulated gate bipolar transistor driving circuit, which can generate two driving power sources for driving two IGBTs, thereby facilitating miniaturization and low cost of the IGBT driving circuit. The driving circuit disclosed in the present invention can be used in a three-level inverter, and can also be used in other inverter modules including multiple IGBTs, which is not limited in the present invention.

[0071] see figure 1 , figure 1 It is a structur...

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Abstract

The invention, which relates to the power electronics field, discloses a drive circuit of an insulated gate bipolar transistor (IGBT). The drive circuit includes a power supply circuit that is used for generating a driving power supply of a first path and a driving power supply of a second path. The power supply circuit is also used for respectively inputting the driving power supply of the firstpath and the driving power supply of the second path into a first drive circuit and a second drive circuit. The first drive circuit, which is driven by the driving power supply of the first path, outputs a drive signal of a first path, and the drive signal of the first path is used for driving a first IGBT; the second drive circuit, which is driven by the driving power supply of the second path, outputs a drive signal of a second path, and the drive signal of the second path is used for driving a second IGBT. According to the drive circuit of the IGBT, two IGBTs can be driven, which is in favor of miniaturization and cost reduction of the IGBT drive circuit.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) drive circuit. Background technique [0002] In inverters, frequency converters, lighting circuits, traction drives, uninterruptible power systems (Uninterruptible Power System, UPS) and other power electronic devices, IGBT is the main power switching device, and its work (including drive and protection) reliability will be It directly affects the reliability of the whole device, so there are many different driving circuits in the IGBT driving industry. For example, the more typical IGBT driving circuits include using optocoupler HCPL3120 or HCPL316J for IGBT driving, using photoelectric isolator PC929 for IGBT driving, and so on. [0003] In the existing IGBT driving circuit, the driving power of the IGBT is generated by an auxiliary power supply. In practice, the inventors found that the auxiliary ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088H02M1/092
Inventor 申大力
Owner 深圳市英威腾光伏科技有限公司