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Wafer machining method

一种加工方法、晶片的技术，应用在金属加工设备、制造工具、激光焊接设备等方向，能够解决晶片破损等问题，达到生产性高的效果

Active Publication Date: 2012-04-04
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the wafer without the ring-shaped reinforcing part has the problem of being easily damaged by handling during dicing.

Method used

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  • Wafer machining method
  • Wafer machining method
  • Wafer machining method

Examples

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Embodiment Construction

[0045] figure 1 The wafer 1 shown is, for example, a silicon wafer, a semiconductor wafer such as gallium arsenide, or silicon carbide, or a wafer of a sapphire-based inorganic material substrate, and has a device region divided by a plurality of devices D by dividing lines L on its surface 1a. 10 ; and the peripheral remaining region 11 surrounding the device region 10 where no device is formed. That is, the device region 10 is a region where there are chips to be commercialized, and the remaining peripheral region 11 is a region where there are no chips to be commercialized.

[0046] The method of grinding the portion corresponding to the back side of the device region 10 of the wafer 1, forming a ring-shaped reinforcing portion thicker than the ground portion around it, and then cutting along the planned dividing line L by laser processing will be described below. Cutting is performed to divide the device region 10 , and the ring-shaped reinforcing portion is further separ...

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Abstract

The present invention provides a wafer machining method capable of dividing a wafer with periphery provided with an annular reinforcing part and with center ground to be thin, without spoiling the handleability. A wafer (1) provided on a face side thereof with a device region (10) where devices are demarcated by planned dividing lines and with a peripheral surplus region surrounding the device region is divided into the individual devices. In performing the dividing process, the back side of the device region is ground to form an annular reinforcement part (13) on the outer peripheral side thereof, a dicing tape (4) is adhered to the back side of the wafer, the wafer is irradiated with a laser beam (61a) from the face side so as to divide the wafer into the devices and to form break starting points in the annular reinforcement part, and the dicing tape is expanded so as to disassembly the annular reinforcement part, with the break starting points as starting points, thereby separating the annular reinforcement part from the device region, and to widen the interval between the adjacent devices. Since the annular reinforcement part is remaining at the time of dividing the wafer into the individual devices, handleability during the dividing process is not spoiled.

Description

technical field [0001] The present invention relates to a processing method for dividing a wafer into individual devices by irradiation of laser beams. Background technique [0002] In the semiconductor device manufacturing process, a plurality of regions are divided on the surface of a substantially disk-shaped semiconductor wafer by dividing lines called streets arranged in a grid pattern, and ICs are formed in these divided regions ( Integrated Circuit: integrated circuit), LSI (large scale integration: large scale integrated circuit) and other devices. Then, the semiconductor wafer is divided into individual semiconductor chips (devices) by cutting the semiconductor wafer along the lanes with a cutting device. [0003] Before cutting along the streets, the back surface of the wafer to be divided is ground to form it into a predetermined thickness. In recent years, in order to achieve weight reduction and miniaturization of electrical equipment, the thickness of the waf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/301B23K26/36
CPCH01L21/304H01L21/67132H01L21/67092
Inventor 广沢俊一郎
Owner DISCO CORP