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Ion source device

An ion source and extraction hole technology, applied in discharge tubes, electrical components, circuits, etc., can solve problems such as difficulty in extracting ribbon ion beams, and achieve the effects of reducing space charge effect, small space density, and good uniformity.

Active Publication Date: 2014-07-30
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the defect that it is difficult for the ion source device in the prior art to extract a ribbon-shaped ion beam with ideal uniformity, and to provide a ribbon-shaped ion beam that can extract a beam with greater intensity and better uniformity. Ion source device for ion beam

Method used

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Embodiment Construction

[0032] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0033] The ion source device of the present invention includes a conventional discharge chamber, a porous multi-electrode extraction system and some known auxiliary components.

[0034] The discharge chamber is used to generate the desired ions in the plasma state.

[0035] The porous multi-electrode extracting system is used to extract ion beams from the discharge chamber, which includes a plurality of electrodes, and the plurality of electrodes are all provided with a plurality of extraction holes at the same position. figure 2 Shown is a schematic diagram of the distribution of multiple extraction holes 3 on each electrode, wherein the area surrounded by the dotted line frame is the distribution area of ​​these extraction holes 3, and the area surrounded by the dotted line frame is d...

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Abstract

The invention discloses an ion source device. The ion source device comprises a discharging chamber and a porous and multielectrode leading-out system. A plurality of leading-out holes of the porous and multielectrode leading-out system are distributed in a leading-out area. The porous and multielectrode leading-out system is characterized in that the leading-out area is a rectangle with the longitudinal size being larger than the horizontal size. By the utilization of the ion source device, banded beams with larger beam intensity and better uniformity can be led out.

Description

technical field [0001] The invention relates to an ion source device. Background technique [0002] The ion implantation method is used to introduce atoms or molecules, usually called impurities, into the target substrate, thereby changing the physical and chemical properties of the substrate material. In many manufacturing fields, especially in the manufacture of semiconductor products and solar wafers, it is often necessary to use ribbon ion beams to complete the ion implantation process on workpieces. [0003] All ion implanters include ion source devices, which generally include a discharge chamber, a multi-electrode extraction system and some auxiliary components. For the occasion of generating a ribbon ion beam, the extraction hole structure of the multi-electrode extraction system commonly used in the industry is generally figure 1 Shown longitudinally designed elongated single hole 1'. This extraction hole structure can directly extract the required ribbon ion bea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/08H01J37/04H01J37/317
Inventor 钱锋洪俊华陈炯
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY