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Inertia MEMS (micro-electro-mechanical system) sensor and making method thereof

A technology of a microelectromechanical sensor and a manufacturing method, which is applied in the directions of generators/motors, piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of inertial microelectromechanical sensors and semiconductor chips. Issues such as unification of manufacturing

Active Publication Date: 2014-06-18
ZHEJIANG JUEXIN MICROELECTRONICS CO LTD
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Problems solved by technology

However, the existing semiconductor chip manufacturing technology is generally based on CMOS technology; and it is difficult to unify the manufacture of inertial micro-electromechanical sensors and semiconductor chips only by relying on MEMS technology

Method used

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  • Inertia MEMS (micro-electro-mechanical system) sensor and making method thereof
  • Inertia MEMS (micro-electro-mechanical system) sensor and making method thereof
  • Inertia MEMS (micro-electro-mechanical system) sensor and making method thereof

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Embodiment Construction

[0104] In the prior art, the inertial MEMS sensor is generally produced by using MEMS technology or machining technology, so that the inertial MEMS sensor is a separate device externally placed in a semiconductor substrate. This makes the inertial MEMS sensor incompatible with the CMOS process, which is not conducive to the miniaturization of the device. And because the mass of the mass block of the inertial micro-electromechanical sensor is larger, the inertia of the mass block is greater, and the stability and the ability to resist environmental noise are correspondingly better. However, due to the limitations of MEMS technology or mechanical processing technology, the material of the mass blocks of existing inertial MEMS sensors is usually silicon or silicon germanium. The sensor is noisy so that the inertia of the mass cannot meet the requirements of the application. If the existing method is used to increase the mass of the mass block by only increasing the volume of sil...

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Abstract

An inertial micro-electromechanical sensor and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a semiconductor substrate (100), forming an interlayer dielectric layer on the semiconductor substrate (100), forming a cavity (135) in the interlayer dielectric layer, forming a fixing member and a driving electrode electrically insulated with the fixing member in the interlayer dielectric layer outside the cavity (135), and forming a mass block in the cavity (135). The mass block is electrically connected with the fixing member, and can perform movement relative to the driving electrode. The sensor and the manufacturing method thereof combine the micro-electromechanical sensor and the CMOS process, improve the quality and the inertia of the mass block of the micro-electromechanical sensor, and improve noise interference preventing capability of the micro-electromechanical sensor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an inertial micro-electromechanical sensor based on a CMOS process and a manufacturing method thereof. Background technique [0002] MEMS (Microelectromechanical System) technology refers to the technology of designing, processing, manufacturing, measuring and controlling micro / nano (micro / nanotechnology) materials. MEMS is a micro system that integrates mechanical components, optical systems, drive components, and electronic control systems into an integral unit. MEMS are commonly used in position sensors, rotation devices or inertial sensors, such as acceleration sensors, gyroscopes and sound sensors. [0003] An existing traditional inertial micro-electromechanical sensor usually includes a main body and one or more mass blocks. The mass block is a separate structure suspended relative to the main body. The mass block can be supported by a cantilever to form a suspe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/02B81B3/00
CPCG01P15/0802G01P15/125
Inventor 毛剑宏唐德明
Owner ZHEJIANG JUEXIN MICROELECTRONICS CO LTD
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