High-mobility complementary metal oxide semiconductor (CMOS) integrated unit
An integrated unit, high mobility technology, applied in the direction of electrical components, semiconductor devices, transistors, etc., to achieve the effect of reducing the source-drain series resistance, improving performance, and improving electron mobility
Active Publication Date: 2014-03-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, when the gate length of MOS devices is reduced to 90 nanometers, the thickness of the gate oxide layer will be less than 1.2 nanometers, and Moore's Law begins to face challenges from both physics and technology.
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[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0027] This embodiment specifically describes a high-mobility CMOS integrated unit provided by the present invention.
[0028] Such as figure 1 As shown, the high mobility CMOS integrated unit provided by the present invention includes a single crystal silicon substrate 1, a buffer layer 2, a barrier layer 3, a P-type lightly doped InGaAs single crystal Layer 4a, N-type heavily doped InGaAs single crystal layer 4b, first barrier layer 5a, second barrier layer 5b, first N-type heavily doped germanium single crystal layer 6a, second N-type heavily doped germanium single crystal layer Crystal layer 6b, N-type lightly doped germanium single crystal layer 6c, P-type heavily doped germanium single crystal layer 6d, third N-typ...
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The invention discloses a high-mobility complementary metal oxide semiconductor (CMOS) integrated unit, belonging to the field of semiconductor integration technology. According to the high-mobility CMOS integrated unit, a high-electron-mobility In-Ga-As n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) and a high-hole-mobility Ge p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) are integrated on a monocrystalline silicon substrate by a plane, so that integrated CMOS devices with different channel materials and excellent characteristics can be realized, and the high-mobility CMOS integrated unit has the potential of replacing the traditional silicon-based CMOS device and has practical application value in the post-Moors period. The CMOS integrated unit also can be integrated with the traditional silicon-based device and a semiconductor device of III-V compounds and the like, so that multifunctional module monolithic integration can be realized, the power consumption is reduced, and the performance is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor integration, in particular to a high-mobility CMOS integrated unit. Background technique [0002] As the core and foundation of the information industry, semiconductor technology is regarded as an important symbol to measure a country's scientific and technological progress and comprehensive national strength. In the past 40 years, the integrated circuit technology based on silicon CMOS technology has followed Moore's law to increase the working speed of the chip, increase the integration level and reduce the cost by reducing the feature size of the device. The feature size of the integrated circuit has evolved from the micron scale to nanoscale. However, when the gate length of MOS devices is reduced to 90 nanometers, the thickness of the gate oxide layer will be less than 1.2 nanometers, and Moore's Law begins to face challenges from both physics and technology. [0003] Academia and ind...
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IPC IPC(8): H01L27/092H01L29/06H01L29/78H01L29/51
Inventor孙兵刘洪刚
OwnerINST OF MICROELECTRONICS CHINESE ACAD OF SCI