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Installation and method for controlling the installation for the production of polycrystalline silicon

A polysilicon, control signal technology, applied in sampling devices, feeding devices, measuring devices, etc.

Inactive Publication Date: 2012-07-11
GR TECH GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, a considerable amount of cost and time is required in order to commission the plant for the production of polysilicon after the plant has been assembled

Method used

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  • Installation and method for controlling the installation for the production of polycrystalline silicon
  • Installation and method for controlling the installation for the production of polycrystalline silicon
  • Installation and method for controlling the installation for the production of polycrystalline silicon

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Embodiment Construction

[0033] Like numbers refer to like elements throughout the drawings. Furthermore, for the sake of clarity, only the reference numerals necessary for explaining each drawing are shown in a single figure, or the reference numerals necessary to place the figure within the scope of other drawings.

[0034] figure 1 The reactor 10 used in the device 1 according to the invention is shown in perspective and in partial section. The reactor 10 for the production of polysilicon is known from the prior art and is designed for the production of polysilicon according to the monosilane process. The reactor 10 has a reactor base 12 with a plurality of nozzles 400 . The reaction gas mixed with hydrogen gas is injected into the inner space 110 of the reactor 10 through the nozzle 400 . Likewise, a plurality of silicon core rods 60 are placed on the reactor base 12 upon which polysilicon is deposited during processing. In the illustrated embodiment, the exhaust pipe lib is provided via the c...

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Abstract

The invention relates to an installation and a method for the production of polycrystalline silicon in a monosilane process. The installation comprises at least one reactor (10), at least one converter (20), at least one injection reservoir (30) and at least one evaporator (40). Every reactor (10) has a feed line (11a) for a fresh gas mixture and a discharge line (11b) for the partially consumed gas mixture. Every converter (20) has a feed line (21) for a gas mixture and every evaporator (40) has a discharge line (41) for a gas mixture. The installation further comprises a plurality of sampling elements (7) for test samples in the feed line (11a) and the discharge line (11b) of every reactor (10) and in the discharge line (21) of every converter (20) and the discharge line (41) of every evaporator (40). The sampling elements (7) supply the test samples taken to at least one gas chromatograph (2) via respective lines (8).

Description

technical field [0001] The invention relates to a device for producing polysilicon. In order to produce polysilicon, at least one reactor is necessary. Background technique [0002] Polysilicon can be produced according to the monosilane process or the “Siemens” process. These two methods differ substantially in the reaction partners (partners) used to produce polysilicon. [0003] In the "Siemens" process, trichlorosilane (SiHCl 3 ) thermally decomposes in the presence of hydrogen on rods of high-purity silicon heated to 1000 to 1200 °C. Pure silicon is thus deposited on the silicon rod. The hydrogen chloride released in the process is fed back to the production. The process takes place at a pressure of approximately 6.5 bar (bar). [0004] In the monosilane process, monosilane (SiH 4 ) thermally decomposes in the presence of hydrogen on rods of high-purity silicon heated to 850 to 900°C. Pure silicon is thus deposited on the silicon rod. The monosilane process tak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035B01J19/00G01N1/22G01N30/00
CPCB01J19/0006B01J2219/00006B01J2219/00202G01N30/88B01J2219/00094G01N2030/8886B01J19/24B01J2219/0004C01B33/035B01J4/002B01J19/00G01N1/22G01N30/00
Inventor 罗伯特许德克林ㄦ
Owner GR TECH GROUP