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Debonding a glass substrate from carrier using ultrasonic wave

An ultrasonic and substrate technology, which is used in the manufacture of semiconductor devices, electric solid state devices, and semiconductor/solid state devices.

Inactive Publication Date: 2012-08-01
CORNING INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, handling such thin glass substrates presents a significant technical challenge to panel manufacturers, as many production lines are not designed with the capability to handle such significantly thinner glass substrates without significant process improvements. ability

Method used

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  • Debonding a glass substrate from carrier using ultrasonic wave
  • Debonding a glass substrate from carrier using ultrasonic wave
  • Debonding a glass substrate from carrier using ultrasonic wave

Examples

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Embodiment 1

[0105] The functional substrate, temporarily bonded to a carrier substrate using a friable silica inorganic adhesive, was exposed to an aggressive ultrasonic bath. Small cracks and liquid penetration into the bondline were observed. This demonstrates that exposure to ultrasound can weaken the bond between the adhesive and the functional substrate and assist in separation.

Embodiment 2

[0107] Use elastic adhesive (surface tension γS=17mJ / m 2 ) The adhesive strength for temporarily bonding the functional substrate to the carrier substrate follows figure 1 The method shown in the water (surface tension γ L =72mJ / m 2 ) in ultrasonic tanks were fabricated and tested without failure. The same equipment was tested in propanol (which has a lower surface tension compared to water (γ L =23mJ / m 2 ) was tested in liquid) and stratification was observed.

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Abstract

A process for making a device comprising a thin functional substrate (107) comprising bonding the functional substrate to a carrier substrate (101), forming functional components (109) on the functional substrate, and debonding the functional substrate from the carrier substrate by applying ultrasonic wave (205) to the bonding interface. The application of ultrasonic wave aids the debonding step by reducing the tensile stress the functional substrate may experience.

Description

[0001] This application claims the benefit of priority to US Application No. 12 / 548685, filed August 27, 2009. technical field [0002] The present invention relates to methods and devices for fabricating devices based on thin substrates. In particular, the present invention relates to methods and apparatus for fabricating devices on the surface of a thin substrate supported by a carrier substrate. The invention is useful, for example, in fabricating optoelectronic devices (eg display devices) on the surface of thin, flexible glass substrates with a thickness of less than 500 μm using a carrier substrate. Background technique [0003] Conventional TFT LCD displays are manufactured by forming thin film semiconductor transistors on the surface of a glass substrate. The typical thickness of the glass substrate used is about 500-700 μm. LCD panel manufacturers have made substantial capital investments in production lines for these relatively thick glass substrates. [0004] T...

Claims

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Application Information

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IPC IPC(8): H01L21/68
CPCH01L21/6835H01L2221/6835H01L21/6836H01L2221/68395H01L2221/68327H01L2924/19041H01L2221/68381B32B43/006
Inventor A·R·E·卡雷S·M·加纳J·瓦库-恩辛巴
Owner CORNING INC
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