MEMS and method of manufacturing the same
A technology of a micro-electromechanical system and a manufacturing method, which can be applied to parts of television systems, generators/motors, and manufacturing microstructure devices, etc., can solve the problems of unstable switching action, inability to obtain sufficient capacitance, and inability to obtain excellent component characteristics, etc.
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no. 1 Embodiment approach
[0024] The MEMS of the first embodiment will be described.
[0025] [1] Construction
[0026] Figure 1A It is a plan view showing the structure of the MEMS of the first embodiment. Figure 1B is along Figure 1A Sectional view of line 1B-1B in.
[0027] Such as Figure 1B As shown, an insulating film 11 is formed on a support substrate 10 . For example, the supporting substrate 10 is formed of a silicon semiconductor substrate, and the insulating film 11 is formed of a silicon oxide film.
[0028] The first lower electrode 12A, the second lower electrode 12B, the first auxiliary structure 13A, the second auxiliary structure 13B, the third auxiliary structure 13C, and the wiring layer 14 are formed on the insulating film 11 . The first auxiliary structure 13A is arranged adjacent to the first lower electrode 12A and the second lower electrode 12B between the first lower electrode 12A and the second lower electrode 12B. The second auxiliary structure 13B is arranged adjace...
no. 2 Embodiment approach
[0064] The MEMS of the second embodiment will be described. In the first embodiment, the auxiliary structure is formed of the same electrode material as the lower electrode, but in the second embodiment, the auxiliary structure is formed of an insulating film.
[0065] [1] Construction
[0066] Figure 5A It is a plan view showing the structure of the MEMS of the second embodiment. Figure 5B is along Figure 5A Sectional view of line 5B-5B in.
[0067] Such as Figure 5BAs shown, on the insulating film 11 on the support substrate 10, a first lower electrode 12A, a second lower electrode 12B, a first auxiliary structure 31A, a second auxiliary structure 31B, a third auxiliary structure 31C, and wiring lines are formed. Layer 14. The first auxiliary structure 31A is disposed between the first lower electrode 12A and the second lower electrode 12B so as to be adjacent to the first lower electrode 12A and the second lower electrode 12B. The second auxiliary structure 31B i...
no. 3 Embodiment approach
[0088] The MEMS of the third embodiment will be described. In the first and second embodiments, an example in which the auxiliary structure remains is shown, and in the third embodiment, the auxiliary structure is removed together with the sacrificial film after the upper electrodes are formed.
[0089] [1] Construction
[0090] Figure 8A It is a plan view showing the structure of the MEMS of the third embodiment. Figure 8B is along Figure 8A Sectional view of line 8B-8B in.
[0091] Such as Figure 8B As shown, the first lower electrode 12A, the second lower electrode 12B, and the wiring layer 14 are formed on the insulating film 11 on the support substrate 10 . The lower electrodes 12A and 12B are fixed electrodes fixed to the support substrate 10 , and are electrodes for signals, electrodes for driving, electrodes for power supply, or electrodes for reference voltage. Lower electrodes 12A, 12B and wiring layer 14 are formed of a conductive material such as aluminum...
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