Method for manufacturing semiconductor element with metal gate

Abstract

The invention provides a method for manufacturing a semiconductor element with a metal gate. First provide the base. The substrate includes transistors of the first conductivity type and transistors of the second conductivity type. The transistor of the first conductivity type includes a first sacrificial gate, and the transistor of the second conductivity type includes a second sacrificial gate. Then remove the first sacrificial gate to form a first trench, and form a first metal layer and a first material layer in the first trench. The first metal layer and the first material layer are planarized. Then the second sacrificial gate is removed to form a second trench, and a second metal layer and a second material layer are formed in the second trench. Finally, the second metal layer and the second material layer are planarized.

Description

technical field

[0001] The invention relates to a manufacturing method of a semiconductor element with a metal gate. Background technique

[0002] In the known semiconductor industry, polysilicon is widely used in semiconductor devices such as metal-oxide-semiconductor (MOS) transistors as a standard gate material choice. However, as the size of MOS transistors continues to shrink, traditional polysilicon gates have problems such as boron penetration (boron penetration) that leads to device performance degradation and unavoidable depletion effects, making the equivalent gate dielectric The thickness of the electrical layer increases and the capacitance of the gate decreases, which in turn leads to the decline of the driving ability of the device and other difficulties. Therefore, the semiconductor industry is trying to use new gate materials, such as using work function metals to replace the traditional polysilicon gates, as a control electrode that matches the high-k (High...

Images