Programmable memory and manufacturing method thereof

Abstract

The invention provides a programmable memory and a manufacturing method thereof. The memory comprises a CMOS tube and a variable resistor. The CMOS tube comprises a silicon substrate, an isolation layer, a source electrode area, a drain electrode area, a gate region, a first electrode and a second electrode. The silicon substrate is located under the isolation layer. The source electrode area and the drain electrode area are located on both sides in the silicon substrate. The gate region is located on a downside in the isolation layer. Two ends of the gate region are connected with the source electrode area and the drain electrode area. Two sides of the isolation layer are internally provided with a first through hole and a second through hole which are in a vertical direction. A lower end of the first through hole is connected with the source electrode area. An inner part of the first through hole is a first electrode formed by a metal material. The lower end of the second through hole is connected with the drain electrode area. A top half part in the second through hole is a second electrode formed by the metal material. A lower half part in the second through hole is the variable resistor formed by a resistance change material. The memory of the invention can realize programmable addressing operation and the manufacturing method of the memory can be compatible with a current CMOS technology process.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a programmable memory and a manufacturing method thereof. Background technique [0002] When the flash memory (Flash Memory) is manufactured below 65nm, its storage technology will encounter technical difficulties that are theoretically difficult to overcome, such as the limitation of process complexity and the reduction of storage reliability. At present, in the semiconductor industry, people regard some new types of memory as objects to replace Flash memory in the future, and one of the promising technologies is Resistive Random Access memory (RRAM). The materials used for resistive memory at home and abroad include: perovskite phase PZT, Cu-based oxides, W-based oxides, amorphous silicon, etc., and reports have shown that these resistive memory devices can achieve better than the existing Flash memory. Faster read and write speeds and better process scaling capab...

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Problems solved by technology

[0003] In 2008, NANO Lett reported that Sung Hyun Jo and others at the University of Michigan used amorphous silicon (a-Si) to manufacture resistive memory, which verified that amorphous silicon has resistive characteristics and can be used for memory array functions, but the The technology only realizes the verification of simple arrays, and cannot realize circuit functions such as addressing operations

And due to the special process, it has not been fully embedded with the existing CMOS process

Since most of the reported RRAM circuits are criss-cross circuits, that is, the bit lines cross the word lines, and the memory cells are located at the cross points. This circuit does not have a special control unit for the memory cells, so it is difficult to realize the independent control operation of the memory cells. , therefore, the existing RRAM circuit technology is not easy to achieve addressing operation

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