Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of gate dielectric layer

A technology of gate dielectric layer and fabrication method, which is applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve problems such as reducing the performance of components

Inactive Publication Date: 2012-10-31
NAN YA TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, after the above-mentioned tempering treatment, nitrogen (N) in the nitride layer tends to pass through the underlying oxide layer to reach the interface between the oxide layer and the substrate and cause defects, thus degrading the device. efficacy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of gate dielectric layer
  • Manufacturing method of gate dielectric layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Figure 1A to Figure 1B It is a cross-sectional view of the manufacturing process of the gate dielectric layer according to an embodiment of the present invention. The gate dielectric layer is composed of oxide layer and nitride layer. First, please refer to Figure 1A , providing a substrate 100. The substrate 100 is, for example, a silicon substrate. Then, a nitride treatment 102 is performed on the substrate 100 to form a nitride layer 104 on the substrate 100 . The nitriding treatment 102 is, for example, performing a decoupling plasma nitriding process. The thickness of the nitride layer 104 is, for example, less than 10··.

[0023] After that, please refer to Figure 1B , performing an oxidation treatment 106 on the substrate 100 to form an oxide layer 108 between the nitride layer 104 and the substrate 100 . Oxidation treatment is, for example, an in-situ steam generation process. The thickness of the oxide layer 108 is, for example, less than 25··. The n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A manufacturing method of a gate dielectric layer that includes a nitride layer and an oxide layer is provided. A substrate is provided. A nitridation treatment is performed to form the nitride layer on the substrate. An oxidation treatment is performed subsequent to the formation of the nitride layer to form the oxide layer between the nitride layer and the substrate.

Description

technical field [0001] The invention relates to a method for manufacturing a dielectric layer, in particular to a method for manufacturing a gate dielectric layer. Background technique [0002] With the trend of shrinking the size of metal-oxide-semiconductor (MOS) transistors, the quality requirements for the gate dielectric layer in metal-oxide-semiconductor transistors are also getting higher and higher, especially for the gate Requirements for the interface characteristics between the dielectric layer and the substrate. [0003] In the current manufacturing process of the gate dielectric layer, the substrate is usually oxidized first to form an oxide layer on the substrate. Then, nitriding treatment is performed to form a nitride layer on the oxide layer. Afterwards, a tempering treatment is performed to stabilize the properties of the formed film. The above-mentioned oxide layer and nitride layer constitute the gate dielectric layer. [0004] However, after the abov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28
CPCH01L29/518H01L21/28H01L21/28202H01L29/513
Inventor 苏国辉陈逸男刘献文
Owner NAN YA TECH