Check patentability & draft patents in minutes with Patsnap Eureka AI!

Silicon wafer alignment system focal plane calibration method

A technology of silicon wafer alignment and calibration method, which is applied in the field of photolithography, can solve the problems of increasing costs, and achieve the effect of saving costs and eliminating Abbe errors

Active Publication Date: 2012-12-26
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, new hardware needs to be adde

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon wafer alignment system focal plane calibration method
  • Silicon wafer alignment system focal plane calibration method
  • Silicon wafer alignment system focal plane calibration method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] The whole testing process of the present invention is divided into three steps, and all steps use the same alignment mark:

[0023] Step 1: see figure 1 , when the WA optical system 1 scans the alignment mark 2, it will sample the light intensity of the mark. Since the light intensity will decrease with the increase of the defocus amount, this step uses the light intensity value to roughly measure the height of the WA focal plane , the specific process is: the workpiece table 3 keeps no inclination, scans the mark within a relatively large range of heights, records the light intensity values ​​of the workpiece table 3 when it is aligned with the mark at 4 different heights, and fits the light intensity 5 and the workpiece table Height 6 relationship curve, determine the focal plane of the roughly measured WA at the position correspondi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a silicon wafer alignment system focal plane calibration method comprises the steps that: 1, a workpiece stage is maintained non-inclined; a height stepping method is adopted, and a focal plane position of an alignment optical system is roughly detected according to reflected light intensity of an alignment mark; 2, the workpiece stage is maintained at the focal plane position of the alignment optical system; under a plurality of different inclinations, the alignment mark is aligned by the alignment optical system, such that a relationship curve between the alignment position and the inclinations is obtained; and an interferometer Abbe error is further obtained; 3, the inclination is maintained, the height of the workpiece stage is continuously changed, and a straight line representing the relationship between the alignment position and the heights under the corresponding inclination is obtained; the inclination is changed, and the above step is repeated, such that the focal plane height and the focal plane inclination angle of the alignment optical system are obtained; and 4, the focal plane height and the focal plane inclination angle obtained in the step 3 are adopted; the step 2 is repeated with an iterative approach, such that a precise calibration interferometer Abbe error is obtained; and the step 3 is repeated, such that the focal plane of the alignment optical system is precisely calibrated.

Description

technical field [0001] The invention relates to the field of photolithography, in particular to a method for calibrating a focal plane of a silicon wafer alignment system. Background technique [0002] In the optical alignment system (hereinafter referred to as WA) that uses reflective gratings for silicon wafer alignment, it is necessary to ensure that the alignment measurement process is performed on the focal plane of the optical system (hereinafter referred to as WA focal plane), so as to ensure the alignment results accuracy. When the marker is not aligned on the focal plane, the following phenomena will occur: [0003] When the mark is on the focal plane, but there is an inclination to the focal plane, it will not affect the alignment position, but only affect the contrast; [0004] The markers are not on the focal plane, but the markers are parallel to the focal plane, with no inclination, which does not affect the alignment position, only the contrast. [0005] Wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F9/00
Inventor 朱健孙刚
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More