Unlock instant, AI-driven research and patent intelligence for your innovation.

Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method

A device manufacturing method and technology of lithography equipment, applied in micro-lithography exposure equipment, semiconductor/solid-state device manufacturing, optomechanical equipment, etc., can solve unwanted problems

Active Publication Date: 2013-03-06
ASML NETHERLANDS BV
View PDF16 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This requires additional or more powerful electric motors, and turbulence in the liquid may cause undesired or unintended effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
  • Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
  • Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The equipment includes:

[0031] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or deep ultraviolet (DUV) radiation);

[0032] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device MA according to determined parameters;

[0033] - a support table, such as a sensor table to support one or more sensors or a substrate table WT configured to hold a substrate (e.g., a resist-coated substrate) W, configured for use according to a determined A second positioner PW that parametrically precisely positions the surface of the table (eg of the substrate W) is connected; and

[0034]- A projection system (eg a refractive projection lens system) PS configured to p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

Description

technical field [0001] The invention relates to a support table for a lithographic apparatus, a lithographic apparatus and a method of manufacturing a device using the lithographic apparatus. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Transfer of the pattern is performed by imaging the pattern onto a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCH01L21/68G03F7/707G03F7/70716G03F7/70875G03F7/2004H01L21/0273H01L21/6875
Inventor J·G·C·昆尼M·霍本T·S·M·劳伦特H·J·M·凡阿毕伦A·R·J·达森S·C·R·德尔克斯
Owner ASML NETHERLANDS BV