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Method for producing cadmium telluride or cadmium zinc telluride single crystal

A technology for cadmium telluride and cadmium zinc telluride is applied in the field of producing cadmium telluride or cadmium zinc telluride single crystal by a moving heater method, which can solve the problems of poor single crystal performance, gradient change of crystal performance, and reduced crystal performance.

Active Publication Date: 2013-05-22
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The moving heater method is a method that can grow cadmium telluride or cadmium zinc telluride single crystal at a relatively low temperature, but because most of the single crystals grown by the moving heater method have poor performance, subsequent annealing treatment is required To improve the performance, it takes a lot of extra time, and due to the limitation of the diffusion capacity in the large-area material, the subsequent annealing treatment is easy to cause gradient changes in the properties of the crystal.
In addition, crystals grown by the moving heater method often contain a large number of tellurium inclusions, and these low inclusions will also reduce the performance of the crystal

Method used

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  • Method for producing cadmium telluride or cadmium zinc telluride single crystal
  • Method for producing cadmium telluride or cadmium zinc telluride single crystal

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Embodiment Construction

[0008] Specific embodiments of the present invention will be described in detail below. In order to avoid unnecessary detail, well-known constructions or functions are not described in detail in the following text.

[0009] Approximate language used herein may be used in quantitative terms, indicating that certain variations in quantities are permissible without changing essential function. Accordingly, values ​​modified by language such as "about", "approximately" and the like are not limited to the exact value itself. Approximate language may be related, at least in some cases, to the precision of measuring instruments. Numerical ranges given herein may be combined or interchanged, and unless otherwise stated in the text, such ranges shall include the subranges contained within the range.

[0010] Numerical values ​​recited herein include all values ​​in increments of one unit from the lower to the higher, provided that there is a separation of at least two units between a...

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Abstract

The invention relates to a method for producing a cadmium telluride or cadmium zinc telluride single crystal. The method comprises the following steps of: forming an overall temperature field including a crystal growing zone and an in-situ annealing zone; passing a crucible with a rich-tellurium material and a cadmium telluride or cadmium zinc telluride polycrystalline material through the crystal growing zone, wherein the rich-tellurium material in the crucible is molten to form a melting zone in the process, the cadmium telluride or cadmium zinc telluride polycrystalline material is gradually molten into the melting zone and cooled down and the cadmium telluride or cadmium zinc telluride single crystal is separated out; and passing the crucible through the in-situ annealing zone, wherein the cadmium telluride or cadmium zinc telluride single crystal generated in the crystal growing zone is annealed in the process so as to reduce the tellurium conclusion content of the single crystal.

Description

technical field [0001] The invention relates to a device and method for producing single crystals of cadmium telluride or cadmium zinc telluride, in particular to a method of producing cadmium telluride or cadmium telluride by using a moving heater method using cadmium telluride or cadmium zinc telluride polycrystalline materials as raw materials ZnCd single crystal method. Background technique [0002] The moving heater method is a method that can grow cadmium telluride or cadmium zinc telluride single crystal at a relatively low temperature, but because most of the single crystals grown by the moving heater method have poor performance, subsequent annealing treatment is required To improve the performance, it takes a lot of extra time, and due to the limitation of the diffusion capacity in the large-area material, the subsequent annealing treatment is easy to cause gradient changes in the properties of the crystal. In addition, crystals grown by the moving heater method o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B11/00
Inventor 吴召平高绪彬徐悟生江浩川张明龙
Owner GENERAL ELECTRIC CO
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