Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing cadmium telluride or cadmium zinc telluride single crystal

A technology for cadmium telluride and cadmium zinc telluride is applied in the field of producing cadmium telluride or cadmium zinc telluride single crystal by moving heater method, which can solve the problems of reduced crystal performance, poor single crystal performance, crystal performance gradient change and the like

Active Publication Date: 2016-04-27
GENERAL ELECTRIC CO
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The moving heater method is a method that can grow cadmium telluride or cadmium zinc telluride single crystal at a relatively low temperature, but because most of the single crystals grown by the moving heater method have poor performance, subsequent annealing treatment is required To improve the performance, it takes a lot of extra time, and due to the limitation of the diffusion capacity in the large-area material, the subsequent annealing treatment is easy to cause gradient changes in the properties of the crystal.
In addition, crystals grown by the moving heater method often contain a large number of tellurium inclusions, and these low inclusions will also reduce the performance of the crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing cadmium telluride or cadmium zinc telluride single crystal
  • Method for producing cadmium telluride or cadmium zinc telluride single crystal
  • Method for producing cadmium telluride or cadmium zinc telluride single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] Specific embodiments of the present invention will be described in detail below. In order to avoid unnecessary detail, well-known constructions or functions are not described in detail in the following text.

[0009] Approximate language used herein may be used in quantitative terms, indicating that certain variations in quantities are permissible without changing essential function. Accordingly, values ​​modified by language such as "about", "approximately" and the like are not limited to the exact value itself. Approximate language may be related, at least in some cases, to the precision of measuring instruments. Numerical ranges given herein may be combined or interchanged, and unless otherwise stated in the text, such ranges shall include the subranges contained within the range.

[0010] Numerical values ​​recited herein include all values ​​in increments of one unit from the lower to the higher, provided that there is a separation of at least two units between a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
melting pointaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for producing a single crystal of cadmium telluride or cadmium zinc telluride. The method includes: forming an overall temperature field including a crystal growth region and an in-situ annealing region; The crucible of zinc-cadmium polycrystalline material passes through the crystal growth area. In the process, the tellurium-rich material in the crucible melts to form a melting zone, and the cadmium telluride or zinc-cadmium telluride polycrystalline material gradually dissolves into the melting zone. , and then cool to precipitate a single crystal of cadmium telluride or cadmium zinc telluride; and, pass the crucible through the in-situ annealing area, and in this process, the cadmium telluride or cadmium zinc telluride single crystal generated in the crystal growth area is Annealing is performed to reduce the tellurium inclusion content in the single crystal.

Description

technical field [0001] The invention relates to a device and method for producing single crystals of cadmium telluride or cadmium zinc telluride, in particular to a method of producing cadmium telluride or cadmium telluride by using a moving heater method using cadmium telluride or cadmium zinc telluride polycrystalline materials as raw materials ZnCd single crystal method. Background technique [0002] The moving heater method is a method that can grow cadmium telluride or cadmium zinc telluride single crystal at a relatively low temperature, but because most of the single crystals grown by the moving heater method have poor performance, subsequent annealing treatment is required To improve the performance, it takes a lot of extra time, and due to the limitation of the diffusion capacity in the large-area material, the subsequent annealing treatment is easy to cause gradient changes in the properties of the crystal. In addition, crystals grown by the moving heater method o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B11/00
Inventor 吴召平高绪彬徐悟生江浩川张明龙
Owner GENERAL ELECTRIC CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com