Memory element and its manufacturing method
A technology of memory elements and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of general products and methods without suitable structures and methods, inconvenience, etc., to reduce short-channel effects, Behavior to reduce program disturb, effect to reduce second bit effect
Active Publication Date: 2016-03-16
MACRONIX INT CO LTD
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Problems solved by technology
[0008] It can be seen that the above-mentioned existing memory element and its manufacturing method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve
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[0054] In order to further illustrate the technical means and effects that the present invention adopts to achieve the intended purpose of the invention, below in conjunction with the accompanying drawings and preferred embodiments, the specific implementation, structure, method, Steps, features and effects thereof are described in detail below.
[0055] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of the specific implementation, it should be possible to obtain a deeper and more specific understanding of the technical means and effects of the present invention to achieve the intended purpose, but the attached drawings are only for reference and description, not for the purpose of the present invention. be restricted.
[0056] Figure 1 to Figure 7 It is a schematic cross-sectional vie...
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The invention relates to a memory element and a manufacturing method of the memory element. The memory element comprises grid electrodes, grid dielectric layers and two charge storage layers. The grid electrodes are arranged on a substrate. Each grid dielectric layer is arranged between each grid electrode and the substrate. The thickness of each grid dielectric layer is less than that of each grid electrode. Gaps are formed in two sides of each grid dielectric layer, below each grid electrode and above the substrate. Each charge storage layer comprises a main body portion, a first extension portion and a second extension portion. Each main body portion is arranged in each gap. Each first extension portion is connected with each main body portion and protrudes out of the side wall of each grid electrode. Each second extension portion is connected with each corresponding first extension portion and upward extends to the side wall of each grid electrode. An edge of each first extension portion protrudes out of the side wall of each corresponding second extension portion. The memory element and the manufacturing method of the memory element has the advantages of being capable of providing the located charge storage regions, enabling charge to be stored in a fully locating mode, reducing second bit effect and behavior of interference of programming, and reducing short channel effect. The invention further provides the manufacturing method of the memory element.
Description
technical field [0001] The invention relates to an integrated circuit and its manufacturing method, in particular to a memory element and its manufacturing method. Background technique [0002] Memory is a semiconductor device used to store information or data. As computer microprocessors become more powerful, the programs and operations performed by the software also increase. Therefore, the demand for high-capacity memory is gradually increasing. [0003] Among various memory products, non-volatile memory allows data to be programmed, read and erased multiple times, and the data stored in it can be preserved even after the memory's power supply is interrupted. Due to these advantages, non-volatile memory has become a widely used memory in personal computers and electronic equipment. [0004] Well-known electrically programmable and erasable (electrically programmable and erasable) non-volatile memory technologies using charge storage structures, such as electronically e...
Claims
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IPC IPC(8): H01L29/06H01L27/115H01L21/8247H01L27/11568
Inventor 颜士贵
Owner MACRONIX INT CO LTD