Non-volatile memory, and operation method thereof

Abstract

The invention relates to a non-volatile memory, and an operation method thereof. The operation method is a method for reducing a second-bit effect of the non-volatile memory. The operation method is suitable for an N-level cell comprising a first storage location and a second storage location, wherein N is a positive integer greater than 2. The method comprises the following steps that: an operation level group of the first storage location is determined according to levels of the second storage location; when a level of the second storage location is a lower level, the first storage location is operated according to the first operation level group; when the level of the second storage location is a higher level, the first storage location is operated according to the second operation level group; each operation level of the second operation level group is higher than each corresponding operation level in the first operation level group.

Description

technical field [0001] The invention relates to a non-volatile memory and its operation method, in particular to an operation method for reducing the second bit effect in the non-volatile memory. Background technique [0002] Non-volatile memory (non-volatile memory) has the advantages of multiple data storage, reading, erasing, etc., and the stored data will not disappear after power failure, so many electrical products This type of memory must be provided in the computer to maintain the normal operation of electrical products when they are turned on, and has become a memory component widely used in personal computers and electronic equipment. [0003] Nitride read only memory (NBit) is a non-volatile memory that uses charge trapping as a data storage type. The structure of an NBit memory cell is like a metal-oxide-silicon field effect transistor (MOSFET), but the gate silicon oxide layer is made of ONO (oxide-nitride-oxide, oxide-nitride - oxide) layer is replaced. Amon...

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Problems solved by technology

[0008] Based on the above, the second bit effect will not only cause difficulties in the operation of the device, but even reduce the reliability of the device.

Moreover, because the second bit effect reduces the read sense margin (sense margin) and the critical voltage space (Vt window) for operating the left and right bits, making the operation of multi-level memory more difficult

[0009] It can be seen that the above-mentioned existing non-volatile memory and its operation method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

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