Nonvolatile memory body structure

Abstract

The invention relates to a nonvolatile memory body structure. The nonvolatile memory body structure comprises a substrate, multiple first conductive doped areas, at least one second conductive doped area, a conductor layer and a first dielectric layer. Stack structures are arranged on the substrate, each stack structure comprises a charge storage structure, the first conductive doped areas are respectively arranged in the substrate below the corresponding charge storage structures, the second conductive doped area is arranged in the substrate between neighboring charge storage structures and is provided with an overlapping area with each charge storage structure, and the first dielectric layer is arranged between the conductive layer and the second conductive doped area.

Description

technical field [0001] The invention relates to a memory structure and a manufacturing method thereof, in particular to a non-volatile memory structure and a manufacturing method thereof. Background technique [0002] Memory is a semiconductor device designed to store information or data. As the functions of computer microprocessors become more and more powerful, the programs and calculations performed by the software also increase. Therefore, the memory capacity requirements are getting higher and higher. Among all kinds of memory products, non-volatile memory allows multiple data programming, reading and erasing operations, and the data stored in it can be preserved even after the memory is powered off. Based on the above advantages, EEPROM has become a memory widely used in personal computers and electronic devices. [0003] Traditional non-volatile memories use doped polysilicon to make floating gates and control gates. When the memory is programmed, electrons inject...

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Problems solved by technology

In addition, as the size of the memory gradually shrinks, the length of the channel (channel) is also shortened, causing the second bit effect to be more significant, thereby reducing the device performance of the memory.

In addition, since the size of the memory is gradually reduced, the distance between the components is also shortened. Therefore, when the adjacent memory is programmed, the problem of program disturbance (program disturbance) is also likely to occur, which reduces the memory cost. component reliability

[0006] It can be seen that the above-mentioned existing non-volatile memory structure obviously still has inconvenience and defects in product structure and use, and needs to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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