Memory element and manufacturing method of memory element

Abstract

The invention relates to a memory element and a manufacturing method of the memory element. The memory element comprises a substrate, a plurality of insulation structures, a plurality of word lines, a plurality of dielectric layers, a plurality of pairs of charge storage structures and a plurality of word lines. A plurality of channels are formed in the substrate and arranged in the first direction. The insulation structures are located in the channels. The word lines are located in the parts, below the insulation structures, of the substrate. The dielectric layers are located at the positions, between two adjacent insulation structures, of the substrate. The charge storage structures are located at the positions, between the insulation structures and the dielectric layers which are adjacent, of the substrate. The word lines are arranged in the second direction, and the insulation structures, the charge storage structures, the dielectric layers and part of the substrate are covered with the word lines. By means of the memory element, positioning charge storage areas can be provided to enable charges to be completely stored in a positioning mode, the second bit effect is reduced, and behaviors of compiling interference are reduced. The invention further provides the method for manufacturing the memory element.

Description

technical field [0001] The invention relates to a memory element and a manufacturing method thereof. Background technique [0002] Non-volatile memory allows multiple data programming, reading, and erasing operations, and the data stored in it can be preserved even after the memory's power supply is interrupted. Due to these advantages, non-volatile memory has become a widely used memory in personal computers and electronic equipment. [0003] Well-known electrically programmable and erasable non-volatile memory technology using a charge storage structure, such as electronically programmable and erasable read-only memory (EEPROM) and flash Memory (flash memory) has been used in various modern applications. A typical flash memory cell stores charge in a floating gate. Another type of flash memory uses a charge-trapping structure composed of a non-conductive material, such as silicon nitride, to replace the conductive material of the floating gate. When charge-trapping mem...

AI Technical Summary

Problems solved by technology

When the memory cells on the drain side are programmed, due to the thermal electron drift of the programmed memory cells, it will also cause the interference problem that the memory cells on the adjacent source side are programmed at the same time

[0006] It can be seen that the above-mentioned existing memory element and its manufacturing method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

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