Substrate processing device and processing method

Abstract

The invention provides a substrate processing device and method capable of etching faces of semi-conductor chips based on etching liquid. The substrate processing device is provided with a first nozzle (25) supplying etching liquid to the plate face of the semi-conductor chip (W); a thickness detection sensor (29) detecting thickness of the semi-conductor chip etched by the etching liquid; a control device interrupting etching based on the etching liquid when thickness of the semiconductor chip detected by the thickness detection sensor is abnormal; and a grinding body (27) processing the plate face of the semiconductor chip to a rough face when the etching based on the etching liquid is interrupted.

Description

technical field [0001] The present invention relates to a processing apparatus and a processing method of a substrate in which the surface of a substrate such as a semiconductor wafer is etched using an etchant. Background technique [0002] For example, in the manufacturing process of a semiconductor device, an etching process of removing an oxide film, a nitride film, an aluminum film, or the like formed on the surface of a semiconductor wafer using an etching solution is known. [0003] When removing a film formed on the surface of a semiconductor wafer with an etchant, in order to make the film thickness a predetermined thickness, conventionally, etching is performed for a predetermined time, or detection is performed with a film thickness sensor. The thickness of the semiconductor wafer is etched to a desired thickness. [0004] Furthermore, depending on the processing in the subsequent steps, it may be necessary to form a rib shape or the like on the outer peripheral ...

AI Technical Summary

Problems solved by technology

In addition, since the above-mentioned stress relief step or cleaning step is required as an additional step, the process is complicated, so there is a problem such as a decrease in productivity.

In addition, although the processing efficiency of the grinding process is high, it may cause cracks in the semiconductor wafer, so there is also a problem that the processing speed cannot be made more than a certain value.

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