Gas distributor and atomic layer deposition device
A gas distributor and gas technology, applied in coating, gaseous chemical plating, metal material coating technology, etc., can solve the problems of waste of purge gas of the precursor body, increase the volume of the reactor, etc., and achieve the effect of reducing costs
Active Publication Date: 2013-07-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
In the patent CN 1228470C, a circular screen gas distributor composed of multiple holes is disclosed. The reaction gas is drawn from the edge of the substrate to the middle. This structure can well supply the precursor for the sample. However, the diameter of the gas distributor is required to be larger than the sample size, which will increase the volume of the reactor and cause waste of precursor and purge gas
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[0024] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0025] Such as figure 1 As shown, the present embodiment provides a gas distributor, including an air inlet pipe 11, a transition pipe 12 and a gas distribution plate 13, the gas distribution plate 13 is welded to the gas outlet of the transition pipe 12, and the air inlet of the transition pipe 12 is connected to the air inlet. The air duct 11 is connected, the air intake duct 11 is in the shape of a cylinder, and the transition duct 12 is in the shape of a cone with a height of 30 mm. There is an air outlet 14 on the gas distribution plate 13, and the air outlet 14 includes a central air outlet and 8 outer ring air outlets, one central air outlet is located in the center of the air distribution plate 13, and the 8 outer ring air outlets are evenly distributed in the The outer ring of gas disc 13. The diameter of all the a...
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Abstract
The invention relates to the technical field of an atomic layer deposition device, and specifically relates to a gas distributor and an atomic layer deposition device comprising the gas distributor. The gas distributor comprises a gas inlet pipe, a transition pipe, and a gas distribution plate. The gas distribution plate is fixed on a gas outlet of the transition pipe. A gas inlet of the transition pipe is connected with the gas inlet pipe. Gas outlet holes are provided on the gas distribution plate. Obliquely arranged gas flow guide boards are arranged on the outer surface of the gas distribution plate. With the gas distributor provided by the invention, a precursor can completely cover a sample surface. Also, gas has a horizontal-direction velocity component, such that the covering of an entire substrate is faster, thin film uniformity is improved, and cost is effectively reduced.
Description
technical field [0001] The invention relates to the technical field of atomic layer deposition equipment, in particular to a gas distributor and atomic layer deposition equipment including the gas distributor. Background technique [0002] The biggest feature of the atomic layer deposition (ALD) method is that the surface reaction is self-limiting. The single-cycle thin film deposition process consists of the following steps: (1) The first reaction precursor is input to the surface of the substrate material and chemically adsorbed ( (saturated adsorption) is deposited on the surface; (2) the excess precursor is purged with inert gas; (3) when the second precursor is introduced into the reaction chamber, it will be adsorbed on the surface of the substrate material with the first A precursor reacts. A displacement reaction will occur between the two precursors and corresponding by-products will be generated until the reaction vacancies provided by the first precursor adsorbe...
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IPC IPC(8): C23C16/455
Inventor 张艳清夏洋李超波万军吕树玲陈波石莎莉李楠
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI