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Stacked type semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, which can be applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., and can solve the problems of increasing the area of ​​semiconductor structures.

Inactive Publication Date: 2013-07-31
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional semiconductor structures place passive components outside the substrate, which leads to an increase in the area of ​​the semiconductor structure

Method used

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  • Stacked type semiconductor structure and manufacturing method thereof
  • Stacked type semiconductor structure and manufacturing method thereof
  • Stacked type semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0058] Please refer to FIG. 1 , which illustrates a cross-sectional view of a stacked semiconductor structure according to an embodiment of the present invention. The stacked semiconductor structure 100 includes a first substrate 110, at least one first semiconductor chip 120, a second substrate 130, at least one second semiconductor chip 140, a package 150, and at least one first surface mount device (Surface Mount Device, SMD) 160 and at least one second surface mount component 170.

[0059] The first substrate 110 includes a first substrate 111 , a first circuit layer 112 , a second circuit layer 113 and at least one first conductive hole 114 . The upper surface 111u of the first substrate 111 and the upper surface 112u of the first wiring layer 112 jointly define the upper surface of the first substrate 110 . The first circuit layer 112 and the second circuit layer 113 are respectively formed on the upper surface 111u and the lower surface 111b of the first substrate 111 ...

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Abstract

The invention relates to a stacked type semiconductor structure and manufacturing method thereof. The stacked type semiconductor structure comprises a first baseplate, a second baseplate, a first semiconductor chip, a second semiconductor chip and surface sticking elements, wherein the first baseplate has an upper surface; the second baseplate has a lower surface; the first semiconductor chip is arranged on the upper surface of the first baseplate; the second semiconductor chip is arranged on the lower surface of the second baseplate; a first surface sticking element is arranged between the upper surface of the first baseplate and the lower surface of the second baseplate, and is electrically connected with the first baseplate and the second baseplate; and moreover, as the first surface sticking element is positioned between the first baseplate and the second baseplate, the size of the semiconductor structure can be reduced.

Description

technical field [0001] The present invention relates to a stacked semiconductor structure and its manufacturing method, and in particular to a stacked semiconductor structure with surface mount components and its manufacturing method. Background technique [0002] With the development of science and technology, the industry has more and more demands on the functions and sizes of semiconductor structures, resulting in smaller and smaller sizes of semiconductor structures, but more and more functions. Based on increasing functional requirements, semiconductor structures usually include multiple chips and multiple passive components. [0003] In conventional semiconductor structures, the passive components are disposed outside the substrate, which increases the area of ​​the semiconductor structure. Therefore, how to configure passive elements to reduce the size of semiconductor structures is one of the goals of the industry. Contents of the invention [0004] The present i...

Claims

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Application Information

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IPC IPC(8): H01L25/16H01L21/50
CPCH01L23/3121H01L23/49811H01L24/97H01L25/071H01L2224/16225H01L2224/48091H01L2224/48227H01L2924/00014H01L2924/19105H01L2924/3025H01L2223/6677H01L2224/97H01L2924/15192H01L2924/15313H01L2224/85H01L2224/81
Inventor 颜瀚琦刘盈男李维钧
Owner ADVANCED SEMICON ENG INC
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