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Manufacturing method of n-type semiconductor element for refrigeration or heating device

A technology of N-type semiconductors and manufacturing methods, applied in the manufacture/processing of thermoelectric devices, chemical instruments and methods, fine working devices, etc., can solve the problems of high energy consumption, inability to distinguish the head end from the tail end, and reduced work efficiency, etc. problems, to achieve low energy consumption, improve cooling or heating effects, and high work efficiency

Active Publication Date: 2016-01-27
深圳凯联达新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The N-type semiconductor element produced by this traditional method, when it is used to make refrigeration or heating devices, the N-type semiconductor element mainly has a small temperature difference between the two ends (the temperature difference between the hot end and the cold end is small). Generally around 60 degrees), low cooling or heating efficiency, high energy consumption and other issues; in addition, the existing N-type semiconductor components cannot distinguish the head end from the tail end, so when they are used to make refrigeration Or when heating devices, the connection between them cannot realize the orderly connection of the head and the tail, but the connection of the head and the tail is chaotic, so the power conversion efficiency of the semiconductor element cannot be effectively utilized, and its working efficiency is reduced.
Therefore, the use effect of the existing N-type semiconductor elements used for cooling or heating devices is still not ideal.

Method used

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Embodiment Construction

[0012] The present invention will be described in further detail below in conjunction with the embodiments.

[0013] Embodiments of the present invention: The manufacturing method of an N-type semiconductor element used for refrigeration or heating devices of the present invention is that the N-type semiconductor element is made of tellurium, bismuth, and selenium materials. , The selenium material is crushed and ground into 2000 mesh or more than 2000 mesh, and then each material is compounded in parts by weight to obtain a mixture, the compounding ratio is: tellurium 40 to 44 parts, bismuth 53 to 57 parts, selenium 28 ~32 parts; mix the mixture evenly and put it into the glass tube for smelting (in order to cut the crystal rod, the length of the glass tube for smelting can be controlled in the range of 85-100 cm), and put the glass After the tube and the material are dried together, the neck is pulled and the vacuum is processed, and then the glass tube with the mixed material ...

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Abstract

The invention discloses A method for manufacturing an N-type semiconductor element used for a refrigeration or heating device. The N-type semiconductor element is made of tellurium, bismuth, and selenium materials. The tellurium, bismuth, and selenium materials are first crushed and ground into 2000 mesh or more than 2000 mesh. Then, the proportions of the materials in parts by weight are batched to obtain a mixture, and the proportions are: 40-44 parts of tellurium, 53-57 parts of bismuth, and 28-32 parts of selenium. The temperature difference between the two ends of the N-type semiconductor element of the present invention is relatively large during operation. After testing, the temperature difference between the cold end and the hot end of the N-type semiconductor element of the present invention is about 73-78 degrees. Therefore, the present invention has the advantages of high working efficiency and low energy consumption. of the present invention N Type semiconductor components are particularly suitable for making semiconductor cooling or heating devices.

Description

Technical field [0001] The invention relates to a method for manufacturing an N-type semiconductor element used for refrigeration or heating devices, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] Utilizing the characteristics that P-type semiconductors and N-type semiconductors can produce different temperatures at the two ends of the hot and cold ends when they are energized, they have been widely used in the production of semiconductor refrigeration or heating devices. At present, in the prior art, when making N-type semiconductors, it is usually adopted to dope group V elements (such as phosphorus, arsenic, antimony, etc.) into pure silicon crystals to replace the positions of silicon atoms in the crystal lattice. An N-type semiconductor is formed. The N-type semiconductor element produced by this traditional method, when it is used to make refrigeration or heating devices, this N-type semiconductor element mainly has a small...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H10N10/01H10N10/852
CPCC01B19/007B28D5/00H10N10/01C30B15/10C30B15/14C30B29/46
Inventor 陈志明顾伟
Owner 深圳凯联达新材料科技有限公司
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