Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and production method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limited material selectivity, complex process control, etc.

Inactive Publication Date: 2014-01-29
PHOSTEK INC
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires more complex process control and will limit the selectivity of material use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and production method thereof
  • Semiconductor device and production method thereof
  • Semiconductor device and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] Figure 1A to Figure 1E is a cross-sectional view showing a formed semiconductor device 100 according to an embodiment of the present invention. This embodiment can be widely applied to various semiconductor devices, such as semiconductor light emitting devices (such as light emitting diodes), photodetectors (photodetectors), solar cells, transistors, diodes (such as laser diodes), and the like.

[0046] Such as Figure 1A As shown, firstly, a patterned substrate 11 is provided, which has a plurality of protruding portions 111 , and has flat portions 112 between adjacent protruding portions 111 . Figure 1A The patterned substrate 11 shown is integrally formed, and the protrusions 111 can be formed by dry etching or wet etching. In one embodiment, the patterned substrate 11 is a patterned sapphire substrate (PSS) formed by etching sapphire, but is not limited thereto.

[0047] Patterned substrate 11 can be as Figure 1A One-piece molded as shown, also available as ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are a semiconductor device and a production method thereof. A first epitaxial structure is formed on a patterned substrate having a plurality of projections; a tunnel junction layer is formed on the first epitaxial structure. The first epitaxial structure is provided with a certain amount of dislocations due to the patterned substrate, at least part of the dislocations extend up to form a plurality of pits in the upper surface of the first epitaxial structure, and the pits in the upper surface of the first epitaxial layer are distributed under the density larger than 1*108 / cm<2>.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a semiconductor device with pits to control the defect density of a tunnel junction layer and a manufacturing method thereof. Background technique [0002] In order to improve the luminous efficiency of light-emitting diodes (LEDs), one of the methods is to stack two or more light-emitting diodes by using a tunnel junction. Stacked LEDs emit more light than a single LED, thus increasing brightness. The use of the tunnel junction can also enhance the spreading of the current, so that more carriers in the active layer can be recombined. In addition, stacked LEDs have fewer electrode contacts than the same number of single LEDs, which not only saves space, but also reduces the resulting electromigration problem. [0003] One of the traditional methods of forming tunnel junctions is to use heavy doping technology, such as US Patent No. 6,822,991, entitled "Light Emitting Devices In...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L33/00H01L33/02H01L29/32H01L31/0352
CPCH01L33/005H01L31/02366H01L33/20
Inventor 谢炎璋
Owner PHOSTEK INC