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Capacitance type pressure sensor, method for manufacturing same, and input device

The technology of a pressure sensor and manufacturing method is applied in the direction of measuring fluid pressure through electromagnetic components, measuring device, measuring fluid pressure, etc., so as to achieve the effect of reducing measurement sensitivity and improving measurement sensitivity

Active Publication Date: 2014-04-30
ORMON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the pressure sensor disclosed in Patent Document 1 is a pressure sensor that detects pressure by detecting deflection of the diaphragm using a deformation detection element (piezoelectric resistance), and is different from a capacitive pressure sensor.

Method used

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  • Capacitance type pressure sensor, method for manufacturing same, and input device
  • Capacitance type pressure sensor, method for manufacturing same, and input device
  • Capacitance type pressure sensor, method for manufacturing same, and input device

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0060] Below, refer to figure 2 and image 3 The structure of the pressure sensor 11 according to the embodiment of the present invention will be described. figure 2 (A) is a schematic plan view of the pressure sensor 11, figure 2 (B) is figure 2 (A) XX-line profile. in addition, image 3 (A) is a schematic plan view showing the dielectric layer 33 used in the pressure sensor 11 , image 3 (B) is a schematic cross-sectional view of the fixed electrode 32 and the dielectric layer 33 used in the pressure sensor 11 .

[0061] In this pressure sensor 11 , a dielectric layer 33 is formed on a fixed electrode 32 made of a conductive material such as a low-resistance silicon substrate and a metal film. The dielectric layer 33 is made of SiO 2 , SiN, TEOS and other dielectric materials. The dielectric layer 33 has a recessed portion 34 (recessed portion) recessed thereon. A plurality of contact surfaces (surfaces of contact regions) having different heights measured from ...

Embodiment approach 2

[0091] Figure 10 (A) is a schematic plan view of the pressure sensor 61 according to Embodiment 2 of the present invention. Figure 10 (B) is a schematic plan view of the dielectric layer 33 used in the pressure sensor 61 . In this pressure sensor 61 , the concave portion 34 , the first contact surface 35 , the second contact surface 36 , and the diaphragm 38 are all formed in a rectangular shape.

[0092] According to this embodiment, after the diaphragm 38 is fully in contact with the first contact surface 35 and the second contact surface 36 in the short side direction, it extends toward the long side direction of the contact surface of the first contact surface 35 and the second contact surface 36. , therefore, pressure-capacitance characteristics different from that of Embodiment 1 can be obtained.

[0093] In addition, the planar shapes of the concave portion 34, the first contact surface 35, and the second contact surface 36 can be made into various shapes such as sq...

Embodiment approach 3

[0095] Figure 11 It is a schematic sectional view of the pressure sensor 62 according to Embodiment 3 of the present invention. In this pressure sensor 62 , since the second contact surface 36 is inclined obliquely downward toward the first contact surface 35 , the diaphragm 38 is easily in contact with the second contact surface 36 .

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Abstract

A dielectric layer (33) is formed on the upper surface of a fixed electrode (32), and a recess (34) is provided in the surface of the dielectric layer (33). An upper substrate (37) is layered on the surface of the dielectric layer (33) so as to cover the recess (34), and a conductive diaphragm (38) (part of the upper substrate (37)) having a thin film form is disposed over the recess (34). A first contact surface (35) and a second contact surface (36) for making contact with the diaphragm (38) are formed on the surface of the dielectric layer (33) within the recess (34). The first contact surface (35) and the second contact surface (36) are, for example, horizontal surfaces, and the first contact surface (35) and the second contact surface (36) are separated by a step, which is a vertical surface. The second contact surface (36) is in a position higher than the first contact surface (35).

Description

technical field [0001] The present invention relates to a capacitive pressure sensor, its manufacturing method, and an input device, and more particularly, to a touch-mode capacitive pressure sensor that detects pressure by contacting a diaphragm deflected by pressure with a dielectric layer, and its manufacturing method. Also, it relates to an input device to which the capacitive pressure sensor is applied. Background technique [0002] In a typical capacitive pressure sensor, a conductive diaphragm (movable electrode) and a fixed electrode face each other with a gap therebetween, and pressure is detected based on a change in capacitance between the diaphragm deflected by pressure and the fixed electrode. However, when the pressure sensor is a micro device using a silicon substrate or the like and manufactured by MEMS technology, if a large pressure is applied to the diaphragm and the diaphragm is greatly deflected, the diaphragm may be damaged. [0003] Therefore, a press...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L9/00
CPCG01L9/0073G01L1/14G01L9/00
Inventor 井上胜之
Owner ORMON CORP