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Variable resistance memory structure and its forming method

A technology of resistive storage and conductive structure, used in information storage, static memory, digital memory information, etc.

Active Publication Date: 2017-04-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite the compelling features mentioned above, there are many challenges associated with developing RRAM

Method used

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  • Variable resistance memory structure and its forming method
  • Variable resistance memory structure and its forming method
  • Variable resistance memory structure and its forming method

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Embodiment Construction

[0031] The making and using of illustrative embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative only, and do not limit the scope of the invention.

[0032] According to one or more embodiments of the present invention, a semiconductor structure includes a variable resistance memory structure. The variable resistance memory structure includes a variable resistance layer formed between two electrodes. The resistance of the variable resistance layer is changed by applying a specific voltage to each of the two electrodes. Low and high resistances are used to represent a digital signal "1" or "0", allowing data storage. This switching behavior depends not only on the material of the variable resistance layer, but also on the choice of electrodes as well as the interfacial ...

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Abstract

The invention discloses a variable resistance storage structure and a forming method thereof, wherein a semiconductor structure includes a variable resistance storage structure. The semiconductor structure also includes a dielectric layer. A variable resistance memory structure is located above the dielectric layer. The variable resistance memory structure includes a first electrode disposed above the dielectric layer. The first electrode has sides. The variable resistance layer has a first portion disposed over a side of the first electrode and a second portion extending from the first portion away from the first electrode. The second electrode is located above the variable resistance layer.

Description

technical field [0001] The present invention relates generally to semiconductor structures and, more particularly, to variable resistance memory structures and methods of forming variable resistance memory structures. Background technique [0002] In integrated circuits (ICs), resistive random access memory (RRAM) is an emerging technology for the next generation of non-volatile memory devices. RRAM is a memory structure that includes an array of RRAM cells, each of which uses resistance rather than electrical charge to store a bit of data. Specifically, each RRAM cell includes a variable resistance layer whose resistance can be adjusted to represent logic "0" or logic "1". [0003] From an application point of view, RRAM has many advantages. Compared with other non-volatile storage structures, RRAM has a simple cell structure and a CMOS logic-compatible process, which reduces manufacturing complexity and cost. Despite the compelling properties mentioned above, there are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C13/00
CPCH10N70/24H10N70/823H10N70/068H10N70/8833
Inventor 涂国基朱文定杨晋杰廖钰文陈侠威张至扬
Owner TAIWAN SEMICON MFG CO LTD