Electrochromic display device and manufacturing method thereof
A technology of electrochromic and display devices, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., and can solve the problems of unfavorable display effects of electrochromic display devices
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Embodiment 1
[0066] The embodiment of the present invention provides an electrochromic display device, wherein the electrochromic display device includes a plurality of electrochromic pixels, and each electrochromic pixel includes sequentially forming a first conductive layer on a transparent substrate, an electrochromic A color changing layer, a second conductive layer, etc.; an opening area is provided between adjacent electrochromic pixels. The opening area is provided with a thin film transistor and a data electrode. The gate, source, drain, and data electrode of the thin film transistor are all made of opaque materials, and the projection of the gate, source, drain and data electrode of the thin film transistor covers the area where the opening area is located. Since none of the above-mentioned structures transmit light, the above-mentioned structure can achieve the effect of preventing light leakage in the opening area.
[0067] Preferably, the opaque material is metal. The opaque mat...
Embodiment 2
[0093] The embodiment of the present invention provides a method for preparing an electrochromic display device, which is used to form the above-mentioned electrochromic display device.
[0094] Such as Figure 7 As shown, the preparation method includes:
[0095] Step S701, forming a plurality of electrochromic pixels on the transparent substrate.
[0096] Wherein, each electrochromic pixel includes a first conductive layer, an electrochromic layer, and a second conductive layer sequentially formed on the transparent substrate 1, and an opening area 10 is provided between adjacent electrochromic pixels.
[0097] Step S702, forming a thin film transistor and a data electrode in the opening area.
[0098] Wherein, the gate 33, source 32, drain 31 and data electrode 4 of the thin film transistor 3 are made of opaque materials. The projection of the gate 33, source 32, drain 31 and data electrode 4 of the thin film transistor 3 Cover the opening area 10.
[0099] Further, the opaque materi...
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