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Improved low voltage write speed bit cell

A bit cell, logic voltage technology, used in low voltage applications, the improvement of eight transistor bit cells, can solve the problem of performance degradation

Active Publication Date: 2017-05-03
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, when the supply voltage is reduced, the performance degradation is not linear

Method used

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  • Improved low voltage write speed bit cell
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Embodiment Construction

[0035] Aspects of the invention are disclosed in the following description and related drawings directed to specific embodiments of the invention. Alternative embodiments can be devised without departing from the scope of the invention. In addition, well-known elements of the present invention will not be described in detail or will be omitted so as not to obscure the relevant details of the present invention.

[0036] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments of the invention" does not require that all embodiments of the invention include the discussed feature, advantage, or mode of operation.

[0037] As known in the art, in the description herein, the terms "write" and "store" operations are used synonymously. Likewise, the terms "read" and "load" are used synonymo...

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Abstract

In low power CPUs, the best way to reduce power is to reduce the supply voltage. Most low voltage memory arrays use 8T cells (450) with read stability immunity to operate at low voltages. Embodiments of the present invention determine when the write word line (WWL410) rises. If the determination (header pFET 430) shows that the WWL has risen, then at least one of the plurality of p-channel field effect transistors (pFETs 432, 434) is disconnected from the voltage supply, and the plurality of n-channel field effect transistors nFETs are passed At least one of the gate transistors (440, 442) is turned off.

Description

[0001] Claim priority according to 35U.S.C.§119 [0002] This patent application claims the priority of provisional application No. 61 / 589,570 filed on January 23, 2012, entitled "Improved Low Voltage Write Speed ​​Bit Cell (IMPROVED LOW VOLTAGE WRITE SPEED BITCELL)", and said The case has been assigned to its assignee and is hereby expressly incorporated by reference. Technical field [0003] The present invention relates to improving the performance of memory, especially for low voltage applications. More specifically, the performance improvement of low-voltage writing speed bit cells and the improvement of eight-transistor (8T) bit cells are disclosed. Background technique [0004] Manufacturers of electrical devices such as computers continue to work hard to make these devices more effective. One way to make these devices more effective is to reduce the operating voltage of the devices. Therefore, many of these devices utilize low-voltage processors. Many low-voltage process...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/412G11C11/419
CPCG11C11/412G11C11/419G11C7/00
Inventor 乔舒亚·L·帕克特马尼什·加尔吉哈里什·尚卡尔
Owner QUALCOMM INC