Power transistor with at least partially integrated driver stage
A technology of power transistors and transistors, which is applied in the layout of power transistors and the field of driver stages, and can solve problems such as limiting the maximum efficiency of fully integrated technologies
Active Publication Date: 2017-06-13
INFINEON TECH AUSTRIA AG
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- Application Information
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Problems solved by technology
thus also limiting the maximum efficiency of fully integrated technology
Method used
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Embodiment Construction
[0023] According to the embodiments described herein, at least the pull-down transistors of the final stage of the driver are monolithically integrated on the same die as the power transistors of the output stage of the DC-DC converter. Such integration avoids inductive turn-on of the low-side power transistors of the converter output stage by reducing the parasitic inductance between the low-side transistors and the driver. One, several or all of the driver stages can be integrated in the output stage die. The rest of the driver is provided in a separate die. The DC-DC converter can have reduced dead time and increased efficiency because at least the pull-down transistor is removed from the driver die and provided in the output stage die. The area of the converter output stage die containing part of the driver stage is isolated from the area of the die containing the converter power transistors to ensure proper operation. This isolation may be provided by dielectric fil...
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Embodiments of the invention provide a power transistor with an at least partially integrated driver stage. A semiconductor die includes a semiconductor substrate having a first region and a second region isolated from the first region. The power transistor disposed in the first region of the semiconductor substrate has a gate, a source and a drain. The gate driver transistor provided in the second region of the semiconductor substrate has a gate, a source and a drain. The gate driver transistor is electrically connected to the gate of the power transistor and is operable to turn off or turn on the power transistor in response to an externally generated control signal applied to the gate of the gate driver transistor. The first contact pad is electrically connected to the source of the power transistor, the second contact pad is electrically connected to the drain of the power transistor, and the third contact pad is electrically connected to the gate of the gate driver transistor for receiving externally generated control signal.
Description
technical field [0001] The present application relates to power transistors, and more particularly to arrangements of power transistors and corresponding driver stages. Background technique [0002] Buck converters are widely used for direct current-direct current (DC-DC) conversion and preferably have high efficiency. To achieve high efficiency, the high-side and low-side power transistors of the buck converter output stage must switch very quickly and use as little margin (ie, dead time) as possible. However, when switching very rapidly, a voltage is induced on the gate of at least one power transistor. This induced gate voltage results in device turn-on, cross-conduction, and very high losses unless the dead time is very long. [0003] Buck converters are traditionally packaged such that the power transistors of the output stage are provided in one die (chip) and the driver is provided on a separate die, or both the power transistor and driver are fully integrated on a ...
Claims
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IPC IPC(8): H01L27/04H01L21/77
CPCH01L2924/0002H01L29/407H01L29/41766H01L29/78H01L29/7813H01L29/1087H01L27/0207H01L27/088H01L27/092H03K17/04H01L2924/00H01L29/66477H01L29/7827
Inventor M·菲勒梅耶W·雷吉M·珀尔齐尔G·诺鲍尔
Owner INFINEON TECH AUSTRIA AG