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Wafer Edge Chip Planarization Method

A planarization method and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unusable chips, exposure failures, and inability to transfer patterns clearly, and improve uniformity and consistency. Effect

Active Publication Date: 2018-08-17
ACM RES SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a small area, if the surface of the wafer 100 is uneven, the pattern will not be clearly transferred to the wafer 100, resulting in exposure failure, and finally resulting in unusable chips on the wafer

Method used

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  • Wafer Edge Chip Planarization Method
  • Wafer Edge Chip Planarization Method
  • Wafer Edge Chip Planarization Method

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Embodiment Construction

[0019] In order to describe the technical content, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0020] refer to figure 1 and figure 2 , discloses the structural cross-sectional views of wafer edge chips before and after chemical mechanical polishing according to a specific embodiment of the present invention. In this embodiment, the chip structure on the wafer is an aluminum interconnection structure. Taking the aluminum interconnection structure as an example, the wafer edge chip planarization method of the present invention will be described in detail. The forming process of the aluminum interconnect structure includes: first depositing the first adhesive layer 220 on the silicon substrate 210 or the previous interlayer dielectric layer, the material of the first adhesive layer 220 is usually titanium or titanium nitride; Depositing a metal layer 2...

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Abstract

The invention discloses a wafer edge chip flattening method. The method comprises the steps that a wafer to be ground is provided, and a plurality of chips to be ground are distributed on the wafer to be ground; the wafer to be ground is adsorbed to a grinding head, the grinding head is provided with an edge area and a center area, the downward pressure in the edge area of the grinding head is exerted on the edge area of the wafer to be ground, and the downward pressure in the center area of the grinding head is exerted on the center area of the wafer to be ground; the grinding head to which the wafer to be ground is adsorbed is moved to a grinding cushion; the downward pressure in the edge area of the grinding head is set to range from 4.5 psi to 6.0 psi, the downward pressure in the center area of the grinding head is set to range from 3.5 psi to 4.5 psi, the revolving speed of a rotary table is set to range from 100 rpm to 150 rpm, and the chips to be ground are ground to be with the thickness changing from the initial value to the first set value; the downward pressure in the edge area of the grinding head is set to range from 0.8 psi to 1.5 psi, the downward pressure in the center area of the grinding head is set to range from 0.7 psi to 1.2 psi, the revolving speed of the rotary table is set to range from 100 rpm to 150 rpm, and the chips to be ground are ground to be with the thickness changing from the first set value to the target value.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a wafer edge chip planarization method. Background technique [0002] In the current integrated circuit manufacturing process, chemical mechanical polishing (CMP) is still an important planarization technology. Chemical mechanical polishing uses a combination of chemical reaction and mechanical polishing to planarize wafers with uneven surfaces. The process is as follows: First, the wafer to be polished is adsorbed under the grinding head, and then a downward force is applied to the grinding head. pressure, so that the surface of the wafer to be polished is pressed tightly on the polishing pad, and then the turntable with the polishing pad on the surface rotates under the drive of the motor. At the same time, the grinding head also rotates in the same direction. When the grinding head and the turntable rotate , the polishing liquid is supplied to the pol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
CPCH01L21/30625
Inventor 王坚杨贵璞王晖
Owner ACM RES SHANGHAI
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