A method and system for sensing threshold voltage of a solid-state disk flash memory chip

A threshold voltage, flash memory chip technology, applied in the field of solid state disk flash memory chip error correction, can solve problems such as errors and inability to correctly distinguish storage states, and achieve the effects of reducing energy consumption, reducing the number of perceptions, and improving error correction capabilities

Active Publication Date: 2017-12-29
HUAZHONG UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the interference of noise in the flash memory chip, the four threshold voltage windows will cross each other, so that there will be three cross threshold voltage windows, such as figure 2 As shown, the four threshold voltage windows appear to cross each other, so that when the threshold voltage is sensed in the cross threshold voltage window, the corresponding storage state cannot be correctly distinguished, and an error occurs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method and system for sensing threshold voltage of a solid-state disk flash memory chip
  • A method and system for sensing threshold voltage of a solid-state disk flash memory chip
  • A method and system for sensing threshold voltage of a solid-state disk flash memory chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0060] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0061] Such as image 3 As shown, it is the principle of the threshold voltage sensing method of the present invention. Within the three threshold voltage crossing windows, the number of sensing times n in each threshold voltage crossing area is determined according to the required accuracy. Determine the number of perceptions for the left and right half regions of each threshold voltage crossi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a threshold voltage perception optimization method of a flash memory chip inside a solid-state disk, which is mainly used for an optimization method when a multi-layer unit flash memory chip uses a low-density parity check code for error correction. The system structure is mainly composed of LDPC encoding module, flash memory chip storage module, non-uniform threshold voltage sensing module, logarithmic likelihood ratio calculation module and LDPC decoding module. The LDPC encoding module mainly uses LDPC to generate matrix encoding to generate codewords for the original data; the flash memory chip storage module mainly stores data; the non-uniform threshold voltage sensing module mainly senses the non-uniform threshold voltage of the flash memory chip; the log likelihood ratio calculation module is mainly composed of The threshold voltage value obtains the logarithmic likelihood ratio; the LDPC decoding module mainly performs decoding and error correction according to the loglikelihood ratio and the parity check matrix. The invention is applicable to the field of solid-state disk error correction and improves the reliability of stored data.

Description

technical field [0001] The invention belongs to the technical field of error correction of solid-state disk flash memory chips, and more particularly relates to a threshold voltage sensing method and system for solid-state disk flash memory chips. Background technique [0002] With the widespread application of various mobile devices in people's daily life, the flash memory chip (Not And, NAND Flash memory), which is one of the types of non-volatile memory, is playing an increasingly important role. Due to the physical structure of NAND Flash memory, errors are prone to occur. How to ensure the reliability of data has become one of the key technologies for the success of NAND Flash memory applications. Therefore, the reliability guarantee technology using error correction codes has become a key link in the application of NAND Flash memory, and has been widely used and researched. [0003] At present, the architecture of NAND Flash memory has developed from Single Layer Cell...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34
Inventor 冯丹陈俭喜刘景宁戚世贵吴婵明
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products