Preparation methods of ITO (indium tin oxide) layer and ITO pattern, display base panel and display device
A manufacturing method and patterning technology, applied in coating, metal material coating process, semiconductor/solid-state device manufacturing, etc., can solve the problem of polycrystalline indium tin oxide film, bright spots appearing on display panel, indium tin oxide film cannot be Very good etching and other problems, to achieve the effect of reducing the degree of polycrystallization
Active Publication Date: 2015-01-28
BOE TECH GRP CO LTD
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Problems solved by technology
At present, the method of increasing the temperature of the substrate and increasing the thickness of the film is generally used to prepare the indium tin oxide film, but the grains of the thick indium tin oxide film deposited at high temperature will grow or form a columnar structure, resulting in the polycrystallization of the indium tin oxide film
The transmittance of such an indium tin oxide film is not high
Moreover, due to the existence of large-sized indium tin oxide film grains, this indium tin oxide film cannot be etched well, and the indium tin oxide pattern made of such an indium tin oxide film is easy to short circuit, resulting in a corresponding display panel bright spot defect
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[0028] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.
[0029] In the process of realizing the present invention, the applicant found that, in the process of depositing an indium tin oxide layer (the working gas of the magnetron sputtering process is argon) on the substrate by using the magnetron sputtering process under the background vacuum environment , different water flows in the vacuum environment will affect the degree of polycrystallization of the fabricated indium tin oxide layer. And when the fabricated ITO layer is relatively large, the degree of polycrystallization of the fabricated ITO layer can be reduced by setting a larger water flow rate. Correspondingly, when the fabricated ITO layer is relati...
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The invention provides a preparation method of an ITO (indium tin oxide) layer. The method is characterized by depositing the ITO layer on a substrate base panel by adopting a magnetron sputtering process in a background vacuum environment and introducing water to the background vacuum environment to form water vapor in the process of depositing the amorphous ITO layer, wherein the working gas used in the magnetron sputtering process is argon; the speed of introducing water is Q2*T[ITO] / 10000*(1+ / -20%)sccm; Q2 represents the value corresponding to the flow of argon introduced to the background vacuum environment when the unit is sccm; T[ITO] represents the value of the thickness of the ITO layer needing to be deposited when the unit is mu m. The degree of polycrystallization of the prepared ITO layer can be greatly reduced by adopting the preparation method provided by the invention.
Description
technical field [0001] The invention relates to the field of display technology, in particular to an ITO layer, a method for manufacturing an ITO pattern, a display substrate and a display device. Background technique [0002] Indium tin oxide (ITO) film has excellent electrical conductivity and visible light transmittance, is an important transparent conductive film, and has been widely used in optoelectronic devices. There are many ways to prepare indium tin oxide film. The magnetron sputtering method generally used at present, specifically, is to collide the working gas in a low-pressure environment to obtain plasma gas, and then use the plasma gas to bombard the surface of the target material, so that the atoms on the target material are sputtered to the substrate superior. The magnetron sputtering method includes DC magnetron sputtering method and radio frequency sputtering method, and DC magnetron sputtering method is generally used to deposit indium tin oxide film. ...
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Login to View More IPC IPC(8): C23C14/35C23C14/08H01L21/3213
CPCC23C14/086C23C14/35
Inventor 王灿
Owner BOE TECH GRP CO LTD