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Chip with electrostatic discharge protection

An electrostatic discharge protection, electrostatic discharge technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as damage to electronic components, and achieve the effect of high impedance

Active Publication Date: 2017-07-14
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the rapid development of science and technology and the advancement of semiconductor process technology, the size of the electronic components inside the chip has shrunk to only tens of nanometers, so unpredictable sudden voltages or currents may cause damage to these tiny electronic components. For example, electrostatic discharge (ElectroStatic Discharge, ESD) may be introduced through the external pins (Pins) of the chip and cause damage to the electronic components inside the chip.

Method used

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  • Chip with electrostatic discharge protection
  • Chip with electrostatic discharge protection
  • Chip with electrostatic discharge protection

Examples

Experimental program
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Embodiment Construction

[0025] figure 1 It shows a chip with electrostatic discharge protection function according to an embodiment of the present invention. Such as figure 1 As shown, the chip 200 includes power rails 201, power rails 202, pins 27, P-type fin field effect transistors 21, fin resistors 23, N-type fin field effect transistors 22, fin resistors 24, Diode 25 , diode 26 and electrostatic discharge unit 28 . The power rail 201 is used for electrically connecting the power voltage VDD, and the power rail 202 is used for electrically connecting the reference potential VSS. The P-type FinFET 21 has a first terminal 211, a second terminal 212 and a control terminal 213, and the first terminal 211 of the P-type FinFET 21 is electrically connected to the power rail 201, and the P-type FinFET The control terminal 213 of the field effect transistor 21 is used for receiving the transmission signal IN. The fin resistor 23 has a first end 231, a second end 232 and a control end 233, and the firs...

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Abstract

A chip having an electrostatic discharge protection function comprises two power rail lines, a pin, a P type fin field effect transistor, an N type fin field effect transistor, two fin resistors, two diodes and an electrostatic discharge unit. The pin is electrically connected with one power rail line sequentially through one fin resistor and the P type fin field effect transistor and is electrically connected with the other power rail line sequentially through the other fin resistor and the N type fin field effect transistor. Control ends of the two above fin field effect transistors are used for receiving transmission signals. The pin is electrically connected with the two power rail lines respectively through the two diodes. Additionally, the electrostatic discharge unit is electrically connected between the two power rail lines to form into an electrostatic discharge path.

Description

technical field [0001] The invention relates to a chip, in particular to a chip with electrostatic discharge protection function. Background technique [0002] With the rapid development of science and technology and the advancement of semiconductor process technology, the size of the electronic components inside the chip has shrunk to only tens of nanometers, so unpredictable sudden voltages or currents may cause damage to these tiny electronic components. For example, electrostatic discharge (ElectroStatic Discharge, ESD) may be introduced through the external pins (Pins) of the chip to cause damage to the electronic components inside the chip. [0003] Under such circumstances, how to protect the electronic components inside the chip from being damaged by sudden electrostatic discharge has become an important issue that every chip design manufacturer needs to face. Contents of the invention [0004] The invention provides a chip with electrostatic discharge protection ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 陈少平
Owner UNITED MICROELECTRONICS CORP