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A sample processing method for abnormal metal wire pressure welding

A processing method, metal wire technology, applied in the direction of electrical components, circuits, semiconductor/solid-state device testing/measurement, etc., can solve problems such as inability to test, inability to re-bond, short circuit between metal pads, etc.

Active Publication Date: 2017-11-03
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Causes a short circuit between each metal pad, making it impossible to perform subsequent tests
Remanufacturing wafers with the same process conditions will cost a lot of manpower and financial resources
If the solder balls are corroded with acid, the aluminum on the metal pad will also be corroded, making subsequent re-bonding and re-testing impossible

Method used

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  • A sample processing method for abnormal metal wire pressure welding

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Embodiment Construction

[0012] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0013] Such as figure 1 As shown, it is a process flow chart of the sample processing method for abnormal metal wire bonding of the present invention. The chip includes a semiconductor package chip used for experimental testing. The abnormal metal wire bonding includes excessively large or offset solder balls that cause solder The ball is connected to the metal wire on the periphery of the chip, wherein the method includes: removing the metal wire used to connect the metal pad and the bonding pad to prevent static electricity from destroying the chip during operation; using a detection probe to test The resistance value between the short-circuited metal pads; the laser bombards the metal pads to other metal layers of the chip, such as the narrow solder balls in the protection ring (Seal ring), and directly bombards part of the solder balls , to c...

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PUM

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Abstract

The invention discloses a method for processing a sample abnormal in metal wire pressure welding. The method is applied in the semiconductor chip testing structure sample which comprises a packaging base and a chip. The method includes step 1, removing a metal wire used for connecting a metal pad on the chip with a bonding pad on the packaging base in the semiconductor testing structure sample abnormal in metal wire pressure welding; step S2, adopting a detection probe to test resistance between metal pads abnormal in any two welding balls; step 3, bombarding the metal pads to other metal layers of the chip through a laser; step 4, using the detection probe to test resistance, and judging whether the metal pads are disconnected with the other metal layers or not; step 5, re-performing pressure welding on the sample. By the method, short-circuit between the metal pads due to metal wire pressure welding abnormality, like overlarge welding balls or deviation, of a chip testing structure can be avoided, so that stabilizing of process environment for subsequent testing is facilitated.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a sample processing method applied to abnormal bonding of metal wires in a chip test structure. Background technique [0002] Chip reliability testing can be roughly divided into silicon wafer and packaging. The common packaging chip for testing is a kind of ceramic package base, the chip is pasted in the center, and the metal pad on the chip and the bonding pad on the base are connected by gold wire, aluminum wire or copper wire, and the bonding pad and each part of the base are connected. The pins are in one-to-one correspondence, and finally, the electrical test and reliability verification of the test structure are performed by connecting the pins. The method of connecting the metal wire to the bonding pad and the metal pad uses a bonding method. In the process of pressure welding, the solder balls may be too large and offset due to factors such as unstable process conditions, whi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/22H01L22/34
Inventor 唐涌耀
Owner SHANGHAI HUALI MICROELECTRONICS CORP