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Resistance Variable Memory Structure and Method of Forming the Same

A memory and electrode structure technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc.

Active Publication Date: 2015-03-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Despite the compelling features mentioned above, there are many challenges associated with developing RRAM

Method used

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  • Resistance Variable Memory Structure and Method of Forming the Same
  • Resistance Variable Memory Structure and Method of Forming the Same
  • Resistance Variable Memory Structure and Method of Forming the Same

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Experimental program
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Embodiment Construction

[0027] The making and using of illustrative embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative only, and do not limit the scope of the invention.

[0028] According to one or more embodiments of the present invention, at least one variable resistance memory structure is formed within a semiconductor chip region of a substrate. A plurality of semiconductor chip regions are marked on the substrate by scribe lines between the chip regions. The substrate will undergo various cleaning, layering, patterning, etching and doping steps to form semiconductor structures. The term "substrate" herein generally refers to a bulk semiconductor substrate on which various layers and device structures are formed. In some embodiments, the bulk substrate includes silicon or a compound se...

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Abstract

A memory structure includes a first dielectric layer, having a first top surface, over a conductive structure. A first opening in the first dielectric layer exposes an area of the conductive structure, and has an interior sidewall. A first electrode structure, having a first portion and a second portion, is over the exposed area of the conductive structure. The second portion extends upwardly along the interior sidewall. A resistance variable layer is disposed over the first electrode. A second electrode structure, having a third portion and a fourth portion, is over the resistance variable layer. The third portion has a second top surface below the first top surface of the first dielectric layer. The fourth portion extends upwardly along the resistance variable layer. A second opening is defined by the second electrode structure. At least a part of a second dielectric layer is disposed in the second opening.

Description

technical field [0001] The present invention relates generally to semiconductor structures, and more particularly, to variable resistance memory structures and methods of forming variable resistance memory structures. Background technique [0002] Among integrated circuit (IC) devices, resistive random access memory (RRAM) is an emerging technology for next-generation non-volatile memory devices. In general, RRAM typically uses a dielectric material that, although normally insulating, can become conductive by forming filaments or conductive paths after a certain voltage is applied. Once a filament is formed, it can be set (ie, reformed, forming a low resistance across the RRAM) or reset (ie, broken, forming a high resistance across the RRAM) by an appropriate applied voltage. The low and high resistance states can be used to indicate a digital signal "1" or "0" depending on the resistance state, thereby providing a non-volatile memory cell that can store bits. [0003] Fro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H10N80/00
CPCH01L45/08H01L45/16H01L45/1253H01L45/146H01L45/1666H01L45/122H10N70/24H10N70/821H10N70/061H10N70/8833H10B53/30H10N70/841H10N70/011H10N70/021H10N70/066H10N70/826H10N70/828
Inventor 宋福庭谢静佩徐晨祐刘世昌蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD