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power conversion device

A power conversion device and power semiconductor technology, which is applied to output power conversion devices, electrical components, and AC power input is converted into DC power output, etc., and can solve the problems of power semiconductor module failure and long distance.

Active Publication Date: 2017-04-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, even if the wiring between the power semiconductor module and the smoothing capacitor is set to the shortest distance, the number of smoothing capacitors increases according to the amount of current flowing, and the distance between the power semiconductor module and the increased amount of smoothing capacitors becomes longer, Therefore, in a power conversion device with a large amount of current, a snubber is required anyway
The buffer is usually directly connected to the terminal of the power semiconductor module, but a space for installing the buffer is required in front of the terminal
In addition, when the size of the buffer increases, the mass also increases, and when mechanical stress (mechanical stress) is applied to the terminals of the power semiconductor module due to vibration during transportation, etc., the power semiconductor module may fail.

Method used

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Embodiment approach 1

[0020] Next, Embodiment 1 of the present invention will be described in detail with reference to the drawings. figure 1 It is a connection diagram of the power conversion device according to Embodiment 1 of the present invention. The power conversion device has: a rectifier 2 for converting a three-phase AC power supply 1 into a direct current; a smoothing capacitor 3 for smoothing the output of the rectifier 2; and an inverter for converting the direct current smoothed by the smoothing capacitor 3 into variable voltage and variable frequency device 4.

[0021] The rectifier 2 has power semiconductor modules 2a, 2b, 2c connected in series with MOSFETs (Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor Field Effect Transistor) constituting an upper arm and a lower arm. Semiconductor Field Effect Transistor) is housed in one package, and the drain terminals of the upper arms of the positive electrodes of the power semiconductor modules 2a, 2b, and 2c ...

Embodiment approach 2

[0044] Next, Embodiment 2 of the present invention will be described in detail with reference to the drawings. Compared with the power conversion device of Embodiment 1, only the snubber modules 10, 11, and 12 are replaced with snubber modules 10A, 11A, and 12A having different terminal shapes and fixing methods in the power conversion device of Embodiment 2, and other structures and embodiments 1 is the same. Figure 6 (A) is a developed view of the first unit 100a of the power conversion device according to Embodiment 2 of the present invention, Figure 6 (B) is its left side view. also, Figure 7 is showing Figure 6 Arrow Y-Y of the main part of the diagram. exist Figure 6 , Figure 7 in, right with image 3 , Figure 4 The same part is marked with the same number, and the same part as image 3 , Figure 4 Description of the repeating structure.

[0045] By fastening the mounting screws 20 inserted from the two mounting holes 10a to the threaded holes provided ...

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Abstract

The invention provides an electric power conversion device which has a buffer module, does not need to arrange space for a buffer in front of a terminal of a power semiconductor module, and can reduce mechanical stress of the terminal of the power semiconductor module. According to the electric power conversion device, power semiconductor modules are mounted respectively on two opposite faces of a heated block of a heat tube type cooling body, a positive electrode and a negative electrode of each power semiconductor module are connected with a smoothing capacitor via a bus, the electric power conversion device has a buffer module, the buffer module is internally provided with a buffer which suppresses overshoot voltage in switching-on and switching-off of the power semiconductor modules, a plurality of terminals protrude, the buffer module is configured under the heated block, and the terminals are jointed to the buses respectively.

Description

technical field [0001] The present invention relates to a power conversion device composed of a rectifier (converter), a smoothing capacitor (smoothing capacitor) and an inverter (inverter). Background technique [0002] A general power conversion device consists of the following components: a rectifier (converter) that converts AC power to DC; a smoothing capacitor that smoothes the output of the rectifier; and an inverter (inverter) that converts DC to variable voltage and variable frequency. . The main circuit wiring connecting the rectifier and the inverter employs bus-bar wiring to reduce the inductance of the wiring, and a smoothing capacitor is connected in the middle of the bus-bar wiring. [0003] When the inductance of the bus wiring is large because the amount of current flowing through the wiring between the smoothing capacitor and the inverter is large, the overshoot voltage increases when the inverter performs switching operations. As this overshoot voltage i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/00
CPCH02M1/34
Inventor 川地直树
Owner MITSUBISHI ELECTRIC CORP