Realizing circuit of memory container and realizing method of memory container circuit of any order

A technology of memory container and circuit is applied in the field of structure of memory circuit components, which can solve the problems of complex structure of memory container, and achieve the effect of simple circuit structure and convenient parameter adjustment.

Active Publication Date: 2015-04-29
GUANGXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a realization circuit of a memcapacitor, thereby ...

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  • Realizing circuit of memory container and realizing method of memory container circuit of any order
  • Realizing circuit of memory container and realizing method of memory container circuit of any order
  • Realizing circuit of memory container and realizing method of memory container circuit of any order

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Embodiment Construction

[0021] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0022] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations thereof such as "includes" or "includes" and the like will be understood to include the stated elements or constituents, and not Other elements or other components are not excluded.

[0023] Such as figure 1 As shown, a realization circuit of a memcapacitor according to a specific embodiment of the present invention includes: a first operational amplifier U 1 , the second operational amplifier U 2 , the first capacitance C 1 , the second capacitance C 2 , the third capacitor C 3 , resistance R 1 , Feedback resistor R f , current feedback operational amplifier AD844 and the first multiplier A 1 ; ...

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Abstract

The invention discloses a realizing circuit of a memory container. The realizing circuit comprises a first operational amplifier, a second operational amplifier, a first capacitor, a second capacitor, a third capacitor, a resistor, a feedback resistor, a current feedback operational amplifier and a first multiplying unit, wherein the realizing circuit of the memory container is formed by the mutual connection of the above parts, a q-v curve obtained by measuring the circuit to meet an obvious memory effect shown by a magnetic control type memory container, and a status variable relation curve has hysteresis, therefore the realizing circuit is equivalent to the magnetic control type memory container; furthermore, the realizing circuit is simple in structure, and parameters can adjusted conveniently.

Description

technical field [0001] The invention relates to the structural field of memory circuit elements, in particular to a realization circuit of a magnetically controlled memcapacitor and a method for realizing a magnetically controlled memcapacitor circuit of any order. Background technique [0002] In 1971, Professor Cai Shaotang of the University of Berkeley in the United States analyzed the voltage, current, charge and magnetic flux symmetry of basic electronic devices, and proposed that there should be a fourth electronic device, namely the memristor. The resistance of the memristor is related to the historical state and has the ability of memory. In 2008, a team led by Stanley Williams, a scientist at HP Labs, achieved the physical realization of memristors under extremely strict experimental conditions. [0003] In recent years, electronic devices or systems with memory effects similar to memristors have been discovered one after another, such as memcapacitors and memristo...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 陆益民金麒麟黄险峰
Owner GUANGXI UNIV
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