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Realization circuit of memcapacitor and realization method of memcapacitor circuit of arbitrary order

A memcapacitor and circuit technology, which is applied in the structural field of memory circuit components, can solve problems such as the complex structure of memcapacitors, and achieve the effect of simple circuit structure and convenient parameter adjustment

Active Publication Date: 2017-12-12
GUANGXI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a realization circuit of a memcapacitor, thereby overcoming the shortcoming of the complex structure of the memcapacitor transformed on the basis of the memristor

Method used

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  • Realization circuit of memcapacitor and realization method of memcapacitor circuit of arbitrary order
  • Realization circuit of memcapacitor and realization method of memcapacitor circuit of arbitrary order
  • Realization circuit of memcapacitor and realization method of memcapacitor circuit of arbitrary order

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Embodiment Construction

[0021] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0022] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations thereof such as "includes" or "includes" and the like will be understood to include the stated elements or constituents, and not Other elements or other components are not excluded.

[0023] Such as figure 1 As shown, a realization circuit of a memcapacitor according to a specific embodiment of the present invention includes: a first operational amplifier U 1 , the second operational amplifier U 2 , the first capacitance C 1 , the second capacitance C 2 , the third capacitor C 3 , resistance R 1 , Feedback resistor R f , current feedback operational amplifier AD844 and the first multiplier A 1 ; ...

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Abstract

The invention discloses a realization circuit of a memcapacitor, comprising a first operational amplifier, a second operational amplifier, a first capacitor, a second capacitor, a third capacitor, a resistor, a feedback resistor, a current feedback operational amplifier and a first multiplier; The realization circuit of the memcapacitor is formed by interconnecting the above components. The q-v curve obtained by the measurement circuit conforms to the obvious memory effect shown by the magnetically controlled memcapacitor, and its state variable relationship curve has hysteresis. Therefore, the realization circuit It is equivalent to a magnetically controlled memcapacitor, and has a simple circuit structure and convenient parameter adjustment.

Description

technical field [0001] The invention relates to the structural field of memory circuit elements, in particular to a realization circuit of a magnetically controlled memcapacitor and a method for realizing a magnetically controlled memcapacitor circuit of any order. Background technique [0002] In 1971, Professor Cai Shaotang of the University of Berkeley in the United States analyzed the voltage, current, charge and magnetic flux symmetry of basic electronic devices, and proposed that there should be a fourth electronic device, namely the memristor. The resistance of the memristor is related to the historical state and has the ability of memory. In 2008, a team led by Stanley Williams, a scientist at HP Labs, achieved the physical realization of memristors under extremely strict experimental conditions. [0003] In recent years, electronic devices or systems with memory effects similar to memristors have been discovered one after another, such as memcapacitors and memristo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 陆益民金麒麟黄险峰
Owner GUANGXI UNIV
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