Method for controlling high-temperature test needle mark of wafer

Abstract

The invention provides a method for controlling a high-temperature test needle mark of a wafer. The method comprises the following steps: a loading step: loading to a wafer to be tested into a slide holder; a delaying step: delaying a certain time before the wafer to be tested is tested; a data updating and collecting step: updating and collecting data of the wafer to be tested; a testing step: testing the wafer to be tested. The method provided by the invention has the benefit that a needle mark effect and quality accidents such as abnormal test result of the wafer and the loss of the wafer, which are caused by the fact that the precision is changed as the parts of a probe table are deformed due to the change of temperature, are avoided.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit testing, and in particular relates to a method for controlling needle marks when performing high-temperature testing on wafers. Background technique [0002] In the routine testing of wafers, the equipment is routinely set up according to the standard steps established in the operation manual to realize the automatic testing connected with the testing machine. When performing high-temperature tests, the temperature changes will cause physical changes to various precise components of the device itself, including the probe card. This will cause errors in the alignment of the probe and the pressure point when testing the product. The alignment process is to measure whether the position of the probe is consistent with the position of the pressure point on the wafer die through the equipment microscope, so as to ensure that the needle mark will not deviate from the pressure point. point ran...

AI Technical Summary

Problems solved by technology

For example, according to the routine process of high-temperature testing, it can be concluded that the thickness, radius, and length of the probe will change for each batch of testing. The conventional process of high-temperature testing only performs warming on the first wafer of each batch. However, when the test is completed after the current wafer is replaced, there will be a period of interval time. During this interval time, the probe is in a non-contact shelving state. At this time, the probe will change with the ambient temperature. As the temperature keeps changing, the length of the needle mark will also change, which will affect the effect of the needle mark

Although there is also a method for correcting needle marks, the effect is not ideal

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