Method for controlling high-temperature test needle mark of wafer

A wafer, high-temperature technology, applied in the direction of single semiconductor device testing, components of electrical measuring instruments, measuring electricity, etc., can solve the problems of affecting the effect of needle marks and unsatisfactory effects

Active Publication Date: 2015-05-27
浙江确安科技有限公司
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Problems solved by technology

For example, according to the routine process of high-temperature testing, it can be concluded that the thickness, radius, and length of the probe will change for each batch of testing. The conventional process of high-temperature testing only performs warming on the first wafer of each batch. However, when the test is completed after the current wafer is replaced, there will...

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  • Method for controlling high-temperature test needle mark of wafer
  • Method for controlling high-temperature test needle mark of wafer
  • Method for controlling high-temperature test needle mark of wafer

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Embodiment Construction

[0014] refer to figure 1 The steps shown, S101-S103 are the preparatory work before the high-temperature test, as long as the high-temperature test state is not changed after being set once, there is no need to redo the process again. First, step S101 is heating to a set temperature. That is to say, the equipment is heated up to the set temperature of high temperature, there may be a difference of two degrees, and the heating time is 6 minutes. During the heating process, the position of the slide table should be moved to the initial position. Next, step S102 is to preheat the equipment. After heating up to the set temperature, the equipment is left to stand for 120 minutes, the purpose of which is to establish a high-temperature environment inside the equipment, so that the alignment calibration step can reach a stable state under the high-temperature environment. Then, step S103 is a system calibration step, that is, after preheating, the accuracy of each part of the probe...

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Abstract

The invention provides a method for controlling a high-temperature test needle mark of a wafer. The method comprises the following steps: a loading step: loading to a wafer to be tested into a slide holder; a delaying step: delaying a certain time before the wafer to be tested is tested; a data updating and collecting step: updating and collecting data of the wafer to be tested; a testing step: testing the wafer to be tested. The method provided by the invention has the benefit that a needle mark effect and quality accidents such as abnormal test result of the wafer and the loss of the wafer, which are caused by the fact that the precision is changed as the parts of a probe table are deformed due to the change of temperature, are avoided.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit testing, and in particular relates to a method for controlling needle marks when performing high-temperature testing on wafers. Background technique [0002] In the routine testing of wafers, the equipment is routinely set up according to the standard steps established in the operation manual to realize the automatic testing connected with the testing machine. When performing high-temperature tests, the temperature changes will cause physical changes to various precise components of the device itself, including the probe card. This will cause errors in the alignment of the probe and the pressure point when testing the product. The alignment process is to measure whether the position of the probe is consistent with the position of the pressure point on the wafer die through the equipment microscope, so as to ensure that the needle mark will not deviate from the pressure point. point ran...

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Application Information

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IPC IPC(8): G01R1/067G01R31/26
Inventor 李亮杨振宇石志刚韩顺宝杨颖超
Owner 浙江确安科技有限公司
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