Solid-state imaging device

A solid-state imaging device and pixel technology, which is applied in the fields of electric solid-state devices, radiation control devices, image communication, etc., can solve the problems of signal-to-noise ratio deterioration and signal volume reduction.

Inactive Publication Date: 2015-06-10
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In image sensors, the smaller the pixel area, the smaller the amount of light incident on the pixel, so the amount of signal decreases and the signal-to-noise ratio (SNR) deteriorates

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0037] figure 1 It is a block diagram showing a schematic configuration of the solid-state imaging device of the first embodiment.

[0038] exist figure 1 Among them, the solid-state imaging device is provided with: a pixel array unit 1, in which pixels PC storing charges obtained by photoelectric conversion are arranged in a matrix along the row direction RD and column direction CD; The pixel PC of the read object; the column ADC circuit 3, which uses CDS to detect the signal component of each pixel PC; the horizontal scanning circuit 4, which scans the pixel PC of the read object along the horizontal direction; the timing control circuit 5, which controls the readout of each pixel PC or accumulation timing; and the reference voltage generation circuit 6 outputs the reference voltage VREF to the column ADC circuit 3 . Furthermore, the timing control circuit 5 is input with a master clock MCK.

[0039] In addition, in the pixel array section 1, a horizontal control line Hli...

no. 2 approach

[0081] Figure 12 It is a plan view showing a layout example of photodiodes, floating diffusion regions, and gate electrodes of the solid-state imaging device according to the second embodiment.

[0082] exist Figure 5 In the configuration shown in , the photodiodes PD-R and PD-B are arranged so as to overlap in the depth direction across two pixels.

[0083] while in Figure 12 Here, photodiodes PD-R and PD-B are provided individually for each pixel. Here, the photodiodes PD-R and PD-B can be alternately arranged for each pixel.

no. 3 approach

[0085] Figure 13 It is a plan view showing a layout example of photodiodes, floating diffusion regions, and gate electrodes of the solid-state imaging device according to the third embodiment.

[0086] exist Figure 12 In the configuration shown in , the floating diffusion FD is shared between two adjacent pixels in the oblique direction.

[0087] On the other hand, in Figure 13 In this case, the floating diffusion region FD is shared between two adjacent pixels along the column direction CD.

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Abstract

According to one embodiment, pixels are divided by a grid set diagonally to a column direction, a green photoelectric conversion film is provided for each of the pixels and arranged to overlap a red photoelectric conversion layer in a depth direction, and a blue photoelectric conversion layer is arranged to be overlapped by the green photoelectric conversion film in a depth direction.

Description

[0001] REFERENCE TO RELATED APPLICATIONS: This application enjoys the benefit of priority of Japanese Patent Application No. 2013-254038 filed on December 9, 2013, the entire contents of which are incorporated herein by reference. technical field [0002] This embodiment generally relates to a solid-state imaging device. Background technique [0003] In recent years, camera modules mounted in mobile phones and the like have been required to be thinner and higher in resolution. The miniaturization of pixels of image sensors is progressing in response to the thinning and high resolution of camera modules. In an image sensor, the smaller the pixel area, the smaller the amount of light incident on the pixel, so the amount of signal decreases and the signal-to-noise ratio (SNR) deteriorates. Therefore, image sensors are expected to achieve higher sensitivity by improving light utilization efficiency. Contents of the invention [0004] The problem to be solved by the present i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1461H01L27/14625H01L27/14627H01L27/14665H01L27/14603H01L27/14641H01L27/14621H01L27/14647H01L27/14623H04N25/70H04N23/843H04N25/134
Inventor 江川佳孝
Owner KK TOSHIBA
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