Device and method for carrying out in-situ observation on electric domain structure of ferroelectric material before and after electric field action

A ferroelectric material and electric field technology, applied in the field of ferroelectric materials, can solve the problems of unable to apply continuous pulse voltage, unable to observe the change of electric domain structure, low voltage and so on

Inactive Publication Date: 2015-08-19
CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Claims
  • Application Information

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Problems solved by technology

This method has the following disadvantages: 1. Generally speaking, the voltage that can be applied is low, about 10V, and a few have amplifiers that can amplify the voltage to 50V and above; 2. The electric field can onl

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  • Device and method for carrying out in-situ observation on electric domain structure of ferroelectric material before and after electric field action
  • Device and method for carrying out in-situ observation on electric domain structure of ferroelectric material before and after electric field action
  • Device and method for carrying out in-situ observation on electric domain structure of ferroelectric material before and after electric field action

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with drawings and embodiments.

[0032] like figure 1 and figure 2 As shown, a device for in situ observation of the domain structure of ferroelectric materials before and after an electric field is applied, including:

[0033] a substrate 1;

[0034] The lower electrode 11 is grown on the substrate 1;

[0035] a ferroelectric thin film 12 grown on the lower electrode 11;

[0036] The two upper electrodes 13 are arranged on the ferroelectric thin film 12, the distance between the two upper electrodes 13 is L, and 1 μm≦L≦20 μm.

[0037] In this embodiment, the distance L between the two upper electrodes is 1 μm, and the upper electrodes 13 are arranged in a square shape with a side length of 100 μm.

[0038] A method for in-situ observation of the domain structure of a ferroelectric material before and after an electric field is applied, comprising the following steps:

[0039] A: Observe the ele...

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Abstract

The invention discloses a device and a method for carrying out in-situ observation on an electric domain structure of a ferroelectric material before and after an electric field action. The device is mainly provided with two upper electrodes in a micromachining mode at the surface of a ferroelectric film with a lower electrode, the distance between the two upper electrodes is L, the ferroelectric film between the two upper electrodes acts as an observation point, and variations in electric domain structure of the ferroelectric film between the two upper electrodes before and after the electric field action are observed. Voltage is applied to the ferroelectric film between the two upper electrodes through the two upper electrodes, thereby enabling the ferroelectric film to be polarized. According to the invention, different voltages can be applied to the same point of the ferroelectric film, thereby carrying out in-situ observation on variation conditions of the electric domain structure of the ferroelectric film before and after different voltage actions in the transverse direction.

Description

technical field [0001] The invention belongs to the field of ferroelectric materials, and in particular relates to a device and a method for in-situ observation of electric domain structures of ferroelectric materials before and after an electric field is applied. Background technique [0002] Due to the anomalous photovoltaic effect (photogenerated electric field up to 10 3 ~10 5 V / cm), theoretically has a high photoelectric conversion efficiency, and has attracted much attention for its potential application prospects in the field of solar photovoltaics. However, due to factors such as poor conductivity, the photoelectric conversion efficiency of ferroelectric materials is not high enough compared with traditional silicon-based photovoltaic cells. Therefore, improving the conductivity of ferroelectric materials is an important means to enhance their photoelectric conversion efficiency. [0003] In our previous research, we found that the conductivity of ferroelectric th...

Claims

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Application Information

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IPC IPC(8): G01Q60/00
Inventor 高荣礼符春林蔡苇陈刚邓小玲
Owner CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY
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