Ferroelectric memory
A ferroelectric memory and storage unit technology, applied in the field of storage, can solve the problems affecting the overall life of the reference unit and the great difference in read and write fatigue, achieve good read and write fatigue, and improve the effect of fatigue resistance
Active Publication Date: 2015-11-25
HUAWEI TECH CO LTD +1
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Problems solved by technology
In the existing ferroelectric memory, the reading and writing fatigue of the two reference cells in each pair of reference cells is very different, which seriously affects the overall life of the reference cells
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Embodiment Construction
[0051] An embodiment of the present invention provides a ferroelectric memory, in order to improve the data write-back efficiency of a reference unit and a storage unit, and balance the reading and writing fatigue of two reference units in a reference unit pair.
[0052] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.
[0053] Each will be described in detail below.
[0054] The terms "f...
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A ferroelectric storage device may comprise a first storage unit column (110), a first reference unit (Ck1), a second reference unit (Ck2), and a control circuit (200). The first reference unit (Ck1) and the second reference unit (Ck2) are each used for providing a reference voltage. The control circuit (200) is used for: when reading data stored in a first storage unit (111) in the first storage unit column (110), acquiring the data stored in the first storage unit (111) according to the reference voltages and an output signal of the first storage unit (111); and after reading the data stored in the first storage unit (111), writing, into the first reference unit (Ck1), data having values different from those of the read data, and writing, into the second reference unit (Ck2), data having values identical to those of the data read from the first storage unit (111). The provided ferroelectric storage device can improve data write back efficiency of the reference units and the storage units, and balance read and write fatigue of the two reference units in the pair of reference units.
Description
technical field [0001] The invention relates to the field of memory technology, in particular to a ferroelectric memory. Background technique [0002] Ferroelectric memory is a new type of non-volatile memory device. Ferroelectric memory uses the spontaneous polarization phenomenon in ferroelectric materials to store binary data. [0003] The ferroelectric memory includes a reference unit and a storage unit, wherein the reference unit provides a reference voltage signal for reading and writing data of the storage unit. In the existing ferroelectric memory, the reading and writing fatigue of the two reference cells in each pair of reference cells is very different, which seriously affects the overall life of the reference cells. Contents of the invention [0004] An embodiment of the present invention provides a ferroelectric memory in order to balance the reading and writing fatigue of two reference units in a reference unit pair. [0005] The first aspect of the embodi...
Claims
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IPC IPC(8): G11C11/22
CPCG11C11/22
Inventor 贾泽赵俊峰杨伟邹重人
Owner HUAWEI TECH CO LTD