TSV measuring apparatus and TSV measuring method

Abstract

Disclosed are a TSV measuring apparatus and a TSV measuring method for measuring a via hole such as a TSV. The TSV measuring apparatus, for measuring a TSV formed on an object being measured, comprises: a light source; a digital variable aperture, provided on a path of light irradiated from the light source, for adjusting a light-irradiating area of the light irradiated from the light source according to an aspect ratio of the TSV; a beam splitter for outputting the light having passed through the digital variable aperture by splitting the light into the first direction and the second direction perpendicular to each other, and outputting a combined light by combining a first reflected light, which is reflected from the object being measured disposed in the first direction, and a second reflected light, which is reflected from a mirror disposed in the second direction; and a detector for measuring the TSV by using the combined light guided from the beam splitter, wherein the digital variable aperture performs a function of apertures having selectively different diameters according to the aspect ratio of the TSV without physical movement.

Description

technical field [0001] The present invention relates to a TSV measuring device and a measuring method, and more specifically relates to a TSV measuring device and a measuring method capable of measuring through holes such as TSVs by using an interferometer to which a digital variable aperture is applied. Background technique [0002] In order to realize a high-density semiconductor circuit, a fine line width is realized by exposure, but the line width that can be realized is limited by the diffraction limit. [0003] In order to overcome this problem, a method of reducing the diffraction limit by using light with a shorter wavelength than visible light such as extreme ultraviolet (EUV), and a 3D semiconductor package that increases density by vertically stacking multiple wafer chips that have completed the process (3Dsemi-conductorpackaging) process, etc. [0004] In the 3D semiconductor packaging process in which multiple wafer chips are stacked vertically, in order to for...

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Problems solved by technology

[0008] However, in the case of using the conventional method using an interferometer, when the lens that emits light toward the TSV passes through the wide-angle mirror, the incident angle of the light incident on the TSV is larger than the diameter of the TSV, so the amount of light incident on the inside of the TSV is actually small. Furthermore, the bottom surface of the TSV cannot be reached, so there is a problem that it is practically impossible to measure the TSV or it is difficult to measure the TSV

[0009] Also, even if the light source is replaced to inc

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